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GaAs SMT pHEMT Low Noise Amplifier, 1.2 - 2.2 GHz
Extracto del documento
HMC618ALP3E
v01.0519 AMPLIFIERS -LOW NOISE -SMT GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 -2.2 GHz
Typical Applications Features The HMC618ALP3E is ideal for: Noise Figure: 0.75 dB • Cellular/3G and LTE/WiMAX/4G Gain: 19 dB • BTS & Infrastructure OIP3: 36 dBm • Repeaters and Femto Cells Single Supply: +3V to +5V • Public Safety Radios 50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9 mm2 Functional Diagram General Description
The HMC618ALP3E is a GaAs pHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.2 -2.2 GHz. The amplifier has
been optimized to provide 0.75 dB noise figure,
19 dB gain and +36 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC618ALP3E shares the same package and
pinout with the HMC617LP3E 0.55 -1.2 GHz LNA.
The HMC618ALP3E can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC618ALP3E offers improved noise figure versus
the previously released HMC375LP3(E) and the
HMC382LP3(E). Electrical Specifications TA = +25° C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V …