Datasheet Analog Devices HMC-ALH482-DIE — Ficha de datos

HMC-ALH482
v04.1009 LOW NOISE AMPLIFIERS -CHIP 1 GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 2 -22 GHz Typical Applications Features This HMC-ALH482 is ideal for: Noise Figure: 1.7 dB @ 2-12 GHz • Wideband Communication Systems Noise Figure: 2.2 dB @ 12-22 GHz • Surveillance Systems Gain: 16 dB @ 12 GHz • Point-to-Point Radios P1dB Output Power: +14 dBm • Point-to-Multi-Point Radios Supply Voltage: +4V @ 45 mA • Military & Space Die Size: 2.04 x 1.2 x 0.1 mm • Test Instrumentation General Description Functional Diagram The HMC-ALH482 is a GaAs MMIC HEMT Low Noise
Wideband Amplifier die which operates between 2
and 22 GHz. The amplifier provides 16 dB of gain, 1.7
dB noise figure up to 12 GHz and +14 dBm of output
power at 1 dB gain compression while requiring only
45 mA from a +4V supply voltage. The HMC-ALH482
amplifier is ideal for integration into Multi-ChipModules (MCMs) due to its small size. Electrical Specifi cations*, TA = +25° C, Vdd= +4V
Parameter Min. Frequency Range
Gain Typ. Max. Min. 2 -12
15 Gain Variation over Temperature
Noise Figure 16 15 0.01
1.7 Typ. Max. 12 -22 2.5 Units
GHz 16 dB 0.01 dB / °C 2.2 3 dB Input Return Loss 8 6 dB Output Return Loss 10 5 dB Output Power for 1 dB Compression 14 14 dBm Supply Current (Idd) (Vdd = 4V, Vgg = -0.2V Typ.) 45 45 mA *Unless otherwise indicated, all measurements are from probed die 1 -204 For price,
delivery,
and to placeCorporation:
orders: Analog Devices, Inc.,
For price, delivery, and to place orders, please contact
Hittite
Microwave
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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