Datasheet Analog Devices HMC373LP3ETR — Ficha de datos

HMC373LP3 / 373LP3E
v04.1119 AMPLIFIERS -LOW NOISE -SMT GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 700 -1000 MHz
Typical Applications Features The HMC373LP3 / HMC373LP3E is ideal for
basestation receivers: Noise Figure: 0.9 dB • GSM, GPRS & EDGE Gain: 14 dB • CDMA & W-CDMA Low Loss LNA Bypass Path • Private Land Mobile Radio Single Supply: +5V @ 90 mA Output IP3: +35 dBm 50 Ohm Matched Output Functional Diagram General Description
The HMC373LP3 / HMC373LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers
that integrates a low loss LNA bypass mode on the
IC. The amplifier is ideal for GSM & CDMA cellular
basestation front-end receivers operating between
700 and 1000 MHz and provides 0.9 dB noise figure,
14 dB of gain and +35 dBm IP3 from a single supply of
+5V @ 90 mA. Input and output return losses are 28
and 12 dB respectively with the LNA requiring minimal
external components to optimize the RF input match,
RF ground and DC bias. By presenting an open or
short circuit to a single control line, the LNA can be
switched into a low 2.0 dB loss bypass mode reducing
the current consumption to 10 µA. For applications
which require improved noise figure, please see the
HMC668LP3(E). Electrical Specifications, TA = +25° C, Vdd = +5V
Parameter LNA Mode
Min. Frequency Range …