HMC907A
v03.0218 AMPLIFIERS -LINIAR & POWER -CHIP GaAs pHEMT MMIC
POWER AMPLIFIER, 0.2 -22 GHz
Typical Applications Features The HMC907A is ideal for: High P1dB Output Power: +28 dBm • Test Instrumentation High Gain: 14 dB • Military & Space High Output IP3: +41 dBm
Single Supply: +10V @ 350 mA
50 Ohm Matched Input/Output
Die Size: 2.92 x 1.35 x 0.1 mm Functional Diagram General Description
The HMC907A is a GaAs MMIC pHEMT Distributed
Power Amplifier die which operates between 0.2 and
22 GHz. This self-biased power amplifier provides
14 dB of gain, 41 dBm output IP3 and +28 dBm of
output power at 1 dB gain compression while requiring only 350mA from a +10V supply. Gain flatness is
excellent at ±0.7 dB from DC to 12 GHz making the
HMC907A ideal for EW, ECM, Radar and test equipment applications. The HMC907A amplifier I/Os are
internally matched to 50 Ohms facilitating integration
into Mutli-Chip-Modules (MCMs). All data is taken
with the chip connected via two 0.025mm (1 mil) wire
bonds of minimal 0.31 mm (12 mils) length. Electrical Specifications, TA = +25 °C, Vdd = +10V, Idd = 350mA
Parameter Min. Frequency Range
Gain Max. Min. 12 Typ. Max. Min. 8 -16 13.5 12 13.5 12.5 Typ. Max. Units 16 -22 GHz 14 dB Gain Flatness ±0.7 ±0.6 ±0.3 dB Gain Variation Over Temperature 0.005 0.004 0.007 dB/ °C 14 15 15 dB Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB) 13
25 16 28 25.5 28.5 25 16 dB 28 dBm Saturated Output Power (Psat) 30 30 29 dBm Output Third Order Intercept (IP3) …