HMC464
v04.0308 LINEAR & POWER AMPLIFIERS -CHIP 3 GaAs PHEMT MMIC
POWER AMPLIFIER, 2 -20 GHz Typical Applications Features The HMC464 wideband driver is ideal for: P1dB Output Power: +26 dBm • Telecom Infrastructure Gain: 16 dB • Microwave Radio & VSAT Output IP3: +30 dBm • Military & Space Supply Voltage: +8.0V @ 290 mA • Test Instrumentation 50 Ohm Matched Input/Output • Fiber Optics Die Size: 3.12 x 1.63 x 0.1 mm Functional Diagram General Description
The HMC464 is a GaAs MMIC PHEMT Distributed
Power Amplifier die which operates between 2 and
20 GHz. The amplifier provides 16 dB of gain, +30 dBm
Output IP3 and +26 dBm of output power at 1 dB gain
compression while requiring 290 mA from a +8V supply. Gain flatness is excellent from 2 -18 GHz making
the HMC464 ideal for EW, ECM and radar driver
amplifier applications. The HMC464 amplifier I/O’s
are internally matched to 50 Ohms facilitating easy
integration into Multi-Chip-Modules (MCMs). All data
is with the chip in a 50 Ohm test fixture connected
via 0.025mm (1 mil) diameter wire bonds of minimal
length 0.31mm (12 mils). Electrical Specifi cations, TA = +25° C, Vdd= 8V, Vgg2= 3V, Idd= 290 mA*
Parameter Min. Frequency Range
Gain Typ. Max. Min. 2.0 -6.0
14 Gain Flatness 16 13 ±0.25 Gain Variation Over Temperature 0.02 Typ. Max. Min. 6.0 -18.0
16 11 ±0.5
0.03 0.02 Typ. Max. GHz 14 dB ±0.75
0.03 Units 18.0 -20.0 0.03 dB
0.04 dB/ °C Input Return Loss 15 17 13 Output Return Loss 14 12 11 dB 22 dBm 24.5 dBm Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat) 23.5 26.5 …