Datasheet APT APT40GF120JRD — Ficha de datos

APT40GF120JRD APT40GF120JRD
1200V Fast IGBT E E • Low Tail Current • Ultra Low Leakage Current • Low Forward Voltage Drop • RBSOA and SCSOA Rated 27 2
T-C G The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage. 60A SO "UL Recognized" ISOTOP ® • High Freq. Switching to 20KHz C
G
E MAXIMUM RATINGS
Symbol All Ratings: TC = 25°C unless otherwise specified. Parameter APT40GF120JRD VCES Collector-Emitter Voltage 1200 VCGR Collector-Gate Voltage (RGE = 20KΩ) 1200 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 60 IC2 Continuous Collector Current @ TC = 60°C 40 1 ICM Pulsed Collector Current ILM RBSOA Clamped Inductive Load Current @ Rg = 11Ω TC = 90°C 100 PD Total Power Dissipation 390 TJ,TSTG
TL @ TC = 25°C UNIT Volts Amps 150 Watts -55 to 150 Operating and Storage Junction Temperature Range °C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions MIN TYP MAX VGE(TH) Gate Threshold Voltage 4.5 5.5 6.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) 2.9 3.4 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C) 3.5 4.1 VCE(ON) ICES
I GES (VCE = VGE, I C = 700µA, Tj = 25°C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 0.5 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 5.0 Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website -http://www.advancedpower.com UNIT Volts mA
nA 052-6256 Rev B 7-2002 Symbol APT40GF120JRD DYNAMIC CHARACTERISTICS
Symbol Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance
Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller") Charge tr
td(off)
tf
td(on)
tr
td(off)
tf MAX Turn-on Delay Time MIN 3450 4200 330 470 f = 1 MHz 230 350 Gate Charge
VGE = 15V 325 490 35 40 I C = I C2 195 300 Resistive Switching (25°C) 47 94 VGE = 15V 178 360 320 480 190 380 45 90 102 210 440 880 102 210 Capacitance
VGE = 0V
VCE = 25V 3 Qg td(on) TYP Test Conditions VCC = 0.5VCES Rise Time VCC = 0.5VCES Turn-off Delay Time I C = I C2 Fall Time RG = 10Ω Turn-on Delay Time …