Datasheet STGD3NB60SD-1 - STMicroelectronics IGBT, I-PAK — Ficha de datos

STMicroelectronics STGD3NB60SD-1

Part Number: STGD3NB60SD-1

Descripción detallada

Manufacturer: STMicroelectronics

Description: IGBT, I-PAK

data sheetDownload Data Sheet

Specifications:

  • Transistor Type: IGBT - PowerMESH - Low Drop
  • Max Voltage Vce Sat: 1.5 V
  • Transistor Case Style: I-PAK
  • Case Style: I-PAK
  • Current Temperature: 25°C
  • Fall Time Tf: 720 ns
  • Full Power Rating Temperature: 25°C
  • Max Current Ic Continuous a: 3 A
  • Power Dissipation: 48 W
  • Power Dissipation Pd: 48 W
  • Pulsed Current Icm: 25 A
  • Rise Time: 150000 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - FK 244 13 D PAK
  • Fischer Elektronik - WLK 5
  • Roth Elektronik - RE901

Otros nombres:

STGD3NB60SD1, STGD3NB60SD 1