Datasheet GT15J321 - Toshiba IGBT, 600 V, TO-220NIS — Ficha de datos

Toshiba GT15J321

Part Number: GT15J321

Descripción detallada

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-220NIS

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Docket:
GT15J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT15J321
High Power Switching Applications Fast Switching Applications
· · · · · · The 4th generation FS (fast switching) Enhancement-mode High speed: tf = 0.03 µs (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector.

Unit: mm

Specifications:

  • Transistor Type: IGBT
  • Max Voltage Vce Sat: 2.45 V
  • Collector-to-Emitter Breakdown Voltage: 600 V
  • Transistor Case Style: TO-220NIS
  • Case Style: TO-220NIS
  • Junction to Case Thermal Resistance A: 4.16°C/W
  • Max Current Ic Continuous a: 15 A
  • Max Fall Time: 150 ns
  • Max Junction Temperature Tj: 150°C
  • Power Dissipation: 30 W
  • Power Dissipation Pd: 30 W
  • Pulsed Current Icm: 30 A
  • Rise Time: 40 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Typ Fall Time: 30 ns
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLPG 02