Datasheet GT30J301 - Toshiba IGBT, 600 V, TO-3P(N) — Ficha de datos

Toshiba GT30J301

Part Number: GT30J301

Descripción detallada

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(N)

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Docket:
GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
The 3rd Generation Enhancement-Mode High Speed Low Saturation Voltage : tf = 0.30µs (Max.) : VCE (sat) = 2.7V (Max.) Unit: mm

Specifications:

  • Transistor Type: HP SW IGBT
  • Max Voltage Vce Sat: 2.7 V
  • Collector-to-Emitter Breakdown Voltage: 600 V
  • Transistor Case Style: TO-3P (N)
  • Number of Pins: 3
  • Case Style: TO-3P (N)
  • Max Current Ic Continuous a: 30 A
  • Pin Format: GCE
  • Power Dissipation: 155 W
  • Power Dissipation Pd: 155 W
  • Pulsed Current Icm: 60 A
  • Rise Time: 120 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5