Datasheet NTE3320 - NTE Electronics SINGLE IGBT, 600 V, 50 A — Ficha de datos

NTE Electronics NTE3320

Part Number: NTE3320

Descripción detallada

Manufacturer: NTE Electronics

Description: SINGLE IGBT, 600 V, 50 A

Docket:
NTE3320 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
Features: D Fourth Generation IGBT D Enhancement Mode Type D High Speed D Low Switching Loss D Low Saturation Voltage Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCES .

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate-Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . .

Specifications:

Transistor Type: IGBT
DC Collector Current: 50 A
Collector Emitter Voltage, Vces: 600 V
Power Dissipation, Pd: 200 W
Collector Emitter Voltage, V(br)ceo: 600 V
Number of Pins: 3

RoHS: Yes