Datasheet HGTG20N60B3D - Fairchild IGBT, TO-247 — Ficha de datos

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Manufacturer: Fairchild

Description: IGBT, TO-247

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HGTG20N60B3D
Data Sheet December 2001
40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.

The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016.
Features

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 40 A
• Collector Emitter Voltage Vces: 2 V
• Power Dissipation Max: 165 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-247
• Number of Pins: 3
• SVHC: No SVHC (18-Jun-2010)
• Alternate Case Style: SOT-249
• Current Ic Continuous a Max: 40 A
• Current Temperature: 25°C
• Device Marking: HGTG20N60B3D
• Fall Time tf: 200 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 1
• Package / Case: TO-247
• Pin Configuration: With flywheel diode
• Power Dissipation: 165 W
• Power Dissipation Pd: 165 W
• Pulsed Current Icm: 160 A
• Rise Time: 20 ns
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5