Datasheet HGTG30N60A4D - Fairchild IGBT, TO-247 — Ficha de datos

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Manufacturer: Fairchild

Description: IGBT, TO-247

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HGTG30N60A4D
Data Sheet September 2004
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.

This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
Features

Specifications:

• Transistor Type: IGBT
• DC Collector Current: 75 A
• Collector Emitter Voltage Vces: 2.6 V
• Power Dissipation Max: 463 W
• Collector Emitter Voltage V(br)ceo: 600 V
• Transistor Case Style: TO-247
• Number of Pins: 3
• SVHC: No SVHC (18-Jun-2010)
• Alternate Case Style: SOT-249
• Current Ic Continuous a Max: 75 A
• Current Temperature: 25°C
• Device Marking: HGTG30N60A4D
• Fall Time Typ: 38 ns
• Fall Time tf: 38 ns
• Full Power Rating Temperature: 25°C
• Number of Transistors: 1
• Package / Case: TO-247
• Pin Configuration: With flywheel diode
• Power Dissipation: 463 W
• Power Dissipation Pd: 463 W
• Pulsed Current Icm: 240 A
• Rise Time: 12s
• SVHC (Secondary): Bis (2-ethyl(hexyl)phthalate) (DEHP) (18-Jun-2010)
• Termination Type: Through Hole
• Transistor Polarity: N Channel
• Voltage Vces: 600 V

RoHS: Yes

Accessories:

• Fischer Elektronik - WLK 5