Datasheet 1MBI200S-120 - Fuji Electric IGBT MODULE, 1200 V, 200 A — Ficha de datos

Fuji Electric 1MBI200S-120

Part Number: 1MBI200S-120

Descripción detallada

Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 200 A

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Docket:
Fuji Semiconductor, Inc.

- P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

Specifications:

  • Transistor Type: IGBT Module
  • DC Collector Current: 300 A
  • Collector Emitter Voltage Vces: 2.6 V
  • Power Dissipation Max: 1.3kW
  • Collector Emitter Voltage V(br)ceo: 1200 V
  • Transistor Case Style: M127
  • Current Ic @ Vce Sat: 200 A
  • Current Ic Continuous a Max: 300 A
  • Current Temperature: 25°C
  • External Depth: 62 mm
  • External Length / Height: 35 mm
  • External Width: 108 mm
  • Fall Time tf: 300 ns
  • Full Power Rating Temperature: 25°C
  • Isolation voltage: 2500 V
  • Junction Temperature Tj Max: 150°C
  • Number of Transistors: 1
  • Package / Case: M127
  • Power Dissipation: 1500 W
  • Power Dissipation Pd: 1500 W
  • Pulsed Current Icm: 600 A
  • Rise Time: 600 ns
  • Termination Type: Screw
  • Transistor Polarity: N Channel
  • Voltage Vces: 1200 V
  • Weight: 0.4kg

RoHS: Yes

Otros nombres:

1MBI200S120, 1MBI200S 120