Datasheet GT30J324 - Toshiba IGBT, 600 V, TO-3P(N) — Ficha de datos

Toshiba GT30J324

Part Number: GT30J324

Descripción detallada

Manufacturer: Toshiba

Description: IGBT, 600 V, TO-3P(N)

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Docket:
GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
· · · The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) · · Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 30 A
  • Collector Emitter Voltage Vces: 2.45 V
  • Power Dissipation Max: 170 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -55°C to +150°C
  • Transistor Case Style: TO-3P (N)
  • Current Ic Continuous a Max: 30 A
  • Fall Time Typ: 50 ns
  • Junction Temperature Tj Max: 150°C
  • Junction to Case Thermal Resistance A: 0.735°C/W
  • Package / Case: TO-3P (N)
  • Power Dissipation: 170 W
  • Power Dissipation Pd: 170 W
  • Pulsed Current Icm: 60 A
  • Rise Time: 70 ns
  • Termination Type: Through Hole
  • Transistor Polarity: N Channel
  • Voltage Vces: 600 V

RoHS: Yes

Accessories:

  • Fischer Elektronik - TF 3 2
  • Fischer Elektronik - WLK 5