Features Applications n 650 V, 50 A, Low Collector-Emitter n Switch-Mode Power Supplies (SMPS) Saturation Voltage (VCE(sat)
n Novel trench-gate field-stop technology
n Optimized for conductio RoHS compliant* n Uninterruptible Power Sources (UPS)
n Power Factor Correction (PFC)
n Inverters BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)
General Information Additional Information The Bourns Model BIDW50N65T IGBT device combines technology from a MOS gate
and a bipolar transistor, resulting in an optimum component for high voltage and high
current applications. This device uses Trench-Gate Field-Stop technology providing
greater control of dynamic characteristics while resulting in a lower Collector-Emitter
Saturation Voltage (VCE(sat) and fewer switching losses. In addition, this structure
provides a lower thermal resistance R(th).
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SELECTOR LIBRARY CONTACT Maximum Electrical Ratings (TC = 25 °C, unless otherwise specified)
Parameter Collector-Emitter Voltage Symbol Value Unit VCES 650 V Continuous Collector Current (TC = 25 °C), limited by Tjmax IC 100 A Continuous Collector Current (TC = 100 °C), limited by Tjmax IC 50 A Pulsed Collector Current, tp limited by Tjmax ICP 150 A Gate-Emitter Voltage VGE ±20 V IF 50 A Short-circuit Withstand Time (VCE = 300 V, VGE = 15 V) TSC 10 µs Total Power Dissipation Ptotal 416 W Storage Temperature TSTG -55 to +150 °C Tj -55 to +150 °C Symbol Max Unit IGBT Thermal Resistance Junction -Case Rth(j-c)_IGBT 0.3 °C/W Diode Thermal Resistance Junction -Case Rth(j-c)_Diode 0.65 °C/W Continuous Forward Current (TC = 100 °C), limited by Tjmax Operating Junction Temperature Thermal Resistance
Parameter Typical Part Marking Internal Circuit
2 MFR’S
TRADEMARK W50N65T DEVICE CODE YYYYYYY LOT ID:
1ST CHARACTER INDICATES PRODUCTION LINE
2ND CHARACTER INDICATES GRADE
3RD CHARACTER INDICATES YEAR OF MANUFACTURE
4TH CHARACTER INDICATES MONTH OF MANUFACTURE
5TH, 6TH & 7TH CHARACTERS INDICATE SERIAL NO.
(7TH CHARACTER COULD BE OMITTED) *1 …
