Datasheet IHW30N120R2 - Infineon IGBT+ DIODE,1200V,30A,TO247 — Ficha de datos
Part Number: IHW30N120R2
Descripción detallada
Manufacturer: Infineon
Description: IGBT+ DIODE,1200V,30A,TO247
Docket:
IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features: · Powerful monolithic Body Diode with very low forward voltage · Body diode clamps negative voltages · TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior · NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) · Low EMI · Qualified according to JEDEC1 for target applications · Pb-free lead plating; RoHS compliant · Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Applications: · Inductive Cooking · Soft Switching Applications Type IHW30N120R2 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 1200V, Tj 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by T
Specifications:
- Transistor Type: IGBT
- DC Collector Current: 30 A
- Collector Emitter Voltage Vces: 1.8 V
- Power Dissipation Max: 390 W
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Operating Temperature Range: -40°C to +175°C
- Transistor Case Style: TO-247
- Number of Pins: 3
RoHS: Yes
Accessories:
- Fischer Elektronik - THFU 2