Datasheet IKB10N60T - Infineon IGBT+ DIODE,600V,10A,TO263 — Ficha de datos

Infineon IKB10N60T

Part Number: IKB10N60T

Descripción detallada

Manufacturer: Infineon

Description: IGBT+ DIODE,600V,10A,TO263

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Docket:
TrenchStop® Series
IKB10N60T p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode
C
· · · · · · · · · · ·

Specifications:

  • Transistor Type: IGBT
  • DC Collector Current: 10 A
  • Collector Emitter Voltage Vces: 2.05 V
  • Power Dissipation Max: 110 W
  • Collector Emitter Voltage V(br)ceo: 600 V
  • Operating Temperature Range: -40°C to +175°C
  • Transistor Case Style: TO-263
  • Number of Pins: 3

RoHS: Yes

Accessories:

  • Fairchild - FSAM10SH60A