Datasheet IGD01N120H2 - Infineon IGBT, N, 1200 V, 1.3 A, D-PAK — Ficha de datos

Infineon IGD01N120H2

Part Number: IGD01N120H2

Descripción detallada

Manufacturer: Infineon

Description: IGBT, N, 1200 V, 1.3 A, D-PAK

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Docket:
IGP01N120H2 IGD01N120H2
HighSpeed 2-Technology
C
·
Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability - tight parameter distribution - Eoff optimized for IC =1A

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.8 V
  • Current Ic Continuous a Max: 1.3 A
  • DC Collector Current: 3.2 A
  • Number of Pins: 3
  • Number of Transistors: 1
  • Operating Temperature Range: -40°C to +150°C
  • Package / Case: D-PAK
  • Power Dissipation Max: 28 W
  • Power Dissipation: 28 W
  • Termination Type: SMD
  • Transistor Case Style: D-PAK
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 1.2kV

RoHS: Yes

Accessories:

  • Fischer Elektronik - WLPG 02