Datasheet 2MBI75S-120 - Fuji Electric IGBT MODULE, 1200 V, 75 A — Ficha de datos

Fuji Electric 2MBI75S-120

Part Number: 2MBI75S-120

Descripción detallada

Manufacturer: Fuji Electric

Description: IGBT MODULE, 1200 V, 75 A

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Docket:
2MBI 75S-120
IGBT MODULE ( S-Series ) I Features
· NPT-Technology · Square SC SOA at 10 x IC · High Short Circuit Withstand-Capability · Small Temperature Dependence of the Turn-Off Switching Loss · Low Losses And Soft Switching
2-Pack IGBT 1200V 2x75A
I Outline Drawing

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 2.6 V
  • Current Ic @ Vce Sat: 75 A
  • Current Ic Continuous a Max: 100 A
  • Current Temperature: 25°C
  • DC Collector Current: 100 A
  • External Depth: 34 mm
  • External Length / Height: 30 mm
  • External Width: 92 mm
  • Fall Time tf: 300 ns
  • Full Power Rating Temperature: 25°C
  • Isolation Voltage: 2.5kV
  • Junction Temperature Tj Max: 150°C
  • Module Configuration: Dual
  • Mounting Type: Screw
  • Number of Pins: 7
  • Number of Transistors: 2
  • Package / Case: M232
  • Power Dissipation Max: 600 W
  • Power Dissipation Pd: 600 W
  • Power Dissipation: 600 W
  • Pulsed Current Icm: 200 A
  • Rise Time: 600 ns
  • Transistor Case Style: Module
  • Transistor Polarity: N Channel
  • Transistor Type:
  • Voltage Vces: 1.2kV
  • Weight: 0.18kg

RoHS: Yes

Otros nombres:

2MBI75S120, 2MBI75S 120