Datasheet BSM50GD120DN2 - Infineon IGBT MODULE, 1200 V, ECONOPACK3 — Ficha de datos

Infineon BSM50GD120DN2

Part Number: BSM50GD120DN2

Descripción detallada

Manufacturer: Infineon

Description: IGBT MODULE, 1200 V, ECONOPACK3

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Docket:
BSM 50 GD 120 DN2
IGBT Power Module
· Power module · 3-phase full-bridge · Including fast free-wheel diodes · Package with insulated metal base plate Type BSM 50 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 k Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min.

Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot 350 + 150 -40 ... + 125 0.35 0.7 2500 16 11 F 40 / 125 / 56 sec Vac mm K/W °C ICpuls 144 100 W VGE IC 72 50 Symbol VCE VCGR 1200 ± 20 A Values 1200 Unit V VCE IC Package ECONOPACK 2K Ordering Code C67076-A2514-A67
1200V 72A
1

Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2kV
  • Collector Emitter Voltage Vces: 3 V
  • Current Ic Continuous a Max: 50 A
  • Current Temperature: 80°C
  • DC Collector Current: 72 A
  • Full Power Rating Temperature: 25°C
  • Module Configuration: Six
  • Mounting Type: Solder
  • Number of Pins: 17
  • Number of Transistors: 6
  • Operating Temperature Range: -40°C to +125°C
  • Package / Case: Econopack 3
  • Power Dissipation Max: 350 W
  • Power Dissipation Pd: 350 W
  • Power Dissipation: 350 W
  • Pulsed Current Icm: 100 A
  • Transistor Case Style: Econopack 3
  • Transistor Type:
  • Voltage Vce Sat Typ: 2.5 V
  • Voltage Vces: 1.2kV

RoHS: Yes