Datasheet IKW25N120H3 - Infineon IGBT+ DIODE, 1200 V, 25 A, TO247 — Ficha de datos

Infineon IKW25N120H3

Part Number: IKW25N120H3

Descripción detallada

Manufacturer: Infineon

Description: IGBT+ DIODE, 1200 V, 25 A, TO247

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Specifications:

  • Collector Emitter Voltage V(br)ceo: 1.2 kV
  • Collector Emitter Voltage Vces: 2.4 V
  • DC Collector Current: 25 A
  • Number of Pins: 3
  • Operating Temperature Range: -40°C to +175°C
  • Power Dissipation Max: 326 W
  • Transistor Case Style: TO-247

RoHS: Yes

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