Datasheet BC857BV - NXP TRANSISTOR, PNP, SOT-666 — Ficha de datos

NXP BC857BV

Part Number: BC857BV

Descripción detallada

Manufacturer: NXP

Description: TRANSISTOR, PNP, SOT-666

data sheetDownload Data Sheet

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 45 V
  • Collector Emitter Voltage Vces: -100 mV
  • Continuous Collector Current Ic Max: 100 A
  • Current Ic Continuous a Max: 100 A
  • DC Collector Current: -100 mA
  • DC Current Gain Min: 200
  • DC Current Gain: 200
  • Full Power Rating Temperature: 25°C
  • Gain Bandwidth ft Typ: 100 MHz
  • Module Configuration: Dual
  • Mounting Type: SMD
  • Number of Pins: 6
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-666
  • Power Dissipation Pd: 200 mW
  • Power Dissipation Ptot Max: 300 mW
  • Power Dissipation per device Max: 200 mW
  • SMD Marking: 3F
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-666
  • Transistor Polarity: PNP
  • Voltage Vcbo: 50 V

RoHS: Yes

Accessories:

  • Electrolube - SMA10SL
  • LICEFA - V11-7-6-10
  • LICEFA - V11-7