Datasheet PBSS4240DPN - NXP TRANSISTOR, SOT-457 — Ficha de datos

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Manufacturer: NXP

Description: TRANSISTOR, SOT-457

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Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 40 V
• Collector Emitter Voltage Vces: 100 V
• Continuous Collector Current Ic Max: 1.35 A
• Current Ic @ Vce Sat: 100 mA
• Current Ic Continuous a Max: 1.35 A
• DC Collector Current: 1.35 A
• DC Current Gain Min: 300
• DC Current Gain: 300
• Full Power Rating Temperature: 25°C
• Gain Bandwidth ft Typ: 150 MHz
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-457
• Power Dissipation Pd: 1.1 W
• Power Dissipation Ptot Max: 750 mW
• Power Dissipation per device Max: 750 mW
• SMD Marking: M3
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-457
• Transistor Polarity: NPN / PNP
• Voltage Vcbo: 40 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL
• LICEFA - V11-7-6-10
• LICEFA - V11-7