Datasheet LM7805 (ON Semiconductor) - 3

LM78XX / LM78XXA — Electrical Characteristics (LM7805)
Refer to the test circuit, -40°C < TJ < 125°C, IO = 500 mA, VI = 10 V, CI = 0.1 μF, unless otherwise specified.
Symbol Parameter Conditions Min. Typ. Max. Unit
TJ = +25°C 4.80 5.00 5.20 VO Output Voltage V IO = 5 mA to 1 A, PO ≤ 15 W, 4.75 5.00 5.25 VI = 7 V to 20 V VI = 7 V to 25 V 4.0 100.0 Regline Line Regulation(2) TJ = +25°C mV
3-T
VI = 8 V to 12 V 1.6 50.0 IO = 5 mA to 1.5 A 9.0 100.0
e
Regload Load Regulation(2) TJ = +25°C mV
rminal
IO = 250 mA to 750 mA 4.0 50.0 IQ Quiescent Current TJ = +25°C 5 8 mA Quiescent Current IO = 5 mA to 1 A 0.03 0.50
1 A Positive V
ΔIQ mA Change VI = 7 V to 25 V 0.30 1.30 ΔVO/ΔT Output Voltage Drift(3) IO = 5 mA -0.8 mV/°C VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 42 μV RR Ripple Rejection(3) f = 120 Hz, VI = 8 V to 18 V 62 73 dB VDROP Dropout Voltage TJ = +25°C, IO = 1 A 2 V
o lt
RO Output Resistance(3) f = 1 kHz 15 mΩ
age Regulator
ISC Short-Circuit Current TJ = +25°C, VI = 35 V 230 mA IPK Peak Current(3) TJ = +25°C 2.2 A
Notes:
2. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 3. These parameters, although guaranteed, are not 100% tested in production. © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com LM78XX / LM78XXA Rev. 1.3.1 3