Datasheet LM7805 (ON Semiconductor) - 8

LM78XX / LM78XXA — Electrical Characteristics (LM7812)
Refer to the test circuit, -40°C < TJ < 125°C, IO = 500 mA, VI = 19 V, CI = 0.33 μF, CO = 0.1 μF, unless otherwise spec- ified.
Symbol Parameter Conditions Min. Typ. Max. Unit
TJ = +25°C 11.5 12.0 12.5 VO Output Voltage V IO = 5 mA to 1 A, PO ≤ 15 W, 11.4 12.0 12.6 VI = 14.5 V to 27 V VI = 14.5 V to 30 V 10 240
3-T
Regline Line Regulation(12) TJ = +25°C mV VI = 16 V to 22 V 3 120
e rminal
IO = 5 mA to 1.5 A 11 240 Regload Load Regulation(12) TJ = +25°C mV IO = 250 mA to 750 mA 5 120 IQ Quiescent Current TJ = +25°C 5.1 8.0 mA
1 A Positive V
I Δ Quiescent Current O = 5 mA to 1 A 0.1 0.5 IQ mA Change VI = 14.5 V to 30 V 0.5 1.0 ΔVO/ΔT Output Voltage Drift(13) IO = 5 mA -1 mV/°C VN Output Noise Voltage f = 10 Hz to 100 kHz, TA = +25°C 76 μV RR Ripple Rejection(13) f = 120 Hz, VI = 15 V to 25 V 55 71 dB
o
VDROP Dropout Voltage IO = 1 A, TJ = +25°C 2 V
lt age Regulator
RO Output Resistance(13) f = 1 kHz 18 mΩ ISC Short-Circuit Current VI = 35 V, TJ = +25°C 230 mA IPK Peak Current(13) TJ = +25°C 2.2 A
Notes:
12. Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be taken into account separately. Pulse testing with low duty is used. 13. These parameters, although guaranteed, are not 100% tested in production. © 2006 Fairchild Semiconductor Corporation www.fairchildsemi.com LM78XX / LM78XXA Rev. 1.3.1 8