Datasheet STTH102 (STMicroelectronics) - 6

FabricanteSTMicroelectronics
DescripciónHigh efficiency ultrafast diode
Páginas / Página7 / 6 — Ordering information. STTH102. 3 Ordering. information. Ordering type. …
Formato / tamaño de archivoPDF / 105 Kb
Idioma del documentoInglés

Ordering information. STTH102. 3 Ordering. information. Ordering type. Marking. Package. Weight. Base qty. Delivery mode. 4 Revision. history

Ordering information STTH102 3 Ordering information Ordering type Marking Package Weight Base qty Delivery mode 4 Revision history

Línea de modelo para esta hoja de datos

Versión de texto del documento

Ordering information STTH102 3 Ordering information Ordering type Marking Package Weight Base qty Delivery mode
STTH102A U12 SMA 0.068 g 5000 Tape and reel STTH102 STTH102 DO-41 0.34 g 2000 Ammopack STTH102RL STTH102 DO-41 0.34 g 5000 Tape and reel
4 Revision history Date Revision Description of Changes
Jul-2003 2A Last update. SMA package dimensions update. Reference A1 max. changed Aug-2004 3 from 2.70mm (0.106inc.) to 2.03mm (0.080). SMA and DO-41 datasheets merged 27-Jun-2005 4 Corrected error in title. Reformatted to current standards. Added Table 4. Dynamic 21-Nov-2006 5 electrical characteristics. Updated dimensions table for DO-41 Plastic package. Added cathode bands to package illustrations. 6/7 Document Outline STTH102 High efficiency ultrafast diode Table 1. Absolute ratings (limiting values) 1 Characteristics Table 2. Thermal resistance Table 3. Static Electrical Characteristics Table 4. Dynamic electrical characteristics Figure 1. Average forward power dissipation versus average forward current (SMA) Figure 2. Average forward power dissipation versus average forward current (DO-41) Figure 3. Average forward current versus ambient temperature (d = 0.5) (SMA) Figure 4. Average forward current versus ambient temperature (d = 0.5) (DO-41) Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu) = 35 µm, recommended pad layout) (SMA) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration (DO-41) Figure 7. Forward voltage drop versus forward current Figure 8. Junction capacitance versus reverse voltage applied (typical values) Figure 9. Reverse recovery time versus dIF/dt (90% confidence) Figure 10. Peak recovery current versus dIF/dt (90% confidence) Figure 11. Reverse recovery charges versus dIF/dt (90% confidence) Figure 12. Relative variations of dynamic parameters versus junction temperature Figure 13. Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35 µm) (SMA) Figure 14. Thermal resistance versus lead length (DO-41) 2 Package information Table 5. SMA Dimensions Figure 15. Footprint (dimensions in mm) Table 6. DO-41 (Plastic) Package dimensions 3 Ordering information 4 Revision history