Datasheet IRF9530NPbF (Infineon) - 4
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 231 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF9530NPbF 2000 20 V = 0V, f = 1MHz GS ID = -8.4A V =-80V C = C + C , C SHORTED DS iss gs gd ds V =-50V C DS r ss = C gd V =-20V DS 1600 C os = s C ds + C gd 15 pF) 1200 Ciss citance ( 10 pa 800 , Ca Coss C Crss 5 400 GS-V , Gate-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 1 10 100 0 10 20 30 40 50 60 Q , Total Gate Charge (nC) DS -V , Drain-to-Source Voltage (V) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY RDS(on) (A rrent T = 150°C J 10 100 n Cu rai 10us T = 25°C J rse D ve 100us 1 Re 10 D-I , Drain Current (A)I , Drain Current (A) , SD -I 1ms T = 25 C ° C T = 175 C ° J 10ms V = GS 0V Single Pulse 0.1 A 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000 -V , Drain-to-Source Voltage (V) SD -V , Source-to-Drain Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED ) BY RDS(on) (A rrent T = 150°C J 10 100 n Cu rai 10us T = 25°C J rse D ve 100us 1 Re 10 D-I , Drain Current (A)I , Drain Current (A) , SD -I 1ms T = 25 C ° C T = 175 C ° J 10ms V = GS 0V Single Pulse 0.1 A 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000 -V , Drain-to-Source Voltage (V) SD -V , Source-to-Drain Voltage (V) DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage