Datasheet IRF9530NPbF (Infineon) - 7
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 7 — Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14 |
| Formato / tamaño de archivo | PDF / 231 Kb |
| Idioma del documento | Inglés |
Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14
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IRF9530NPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • ISD controlled by Duty Factor "D" - VDD • D.U.T. - Device Under Test VGS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D = P.W. Period V [ GS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt V [ DD ] Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% I [ SD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For P-Channel HEXFETS
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
* Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - RG • dv/dt controlled by R + G • ISD controlled by Duty Factor "D" - VDD • D.U.T. - Device Under Test VGS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D = P.W. Period V [ GS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt V [ DD ] Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% I [ SD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For P-Channel HEXFETS