Datasheet OP191, OP291, OP491 (Analog Devices) - 3

FabricanteAnalog Devices
DescripciónMicropower Single-Supply Rail-to-Rail Input/Output Op Amps
Páginas / Página24 / 3 — OP191/OP291/OP491. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table 1. …
RevisiónE
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OP191/OP291/OP491. SPECIFICATIONS ELECTRICAL SPECIFICATIONS. Table 1. Parameter Symbol. Conditions. Min. Typ. Max. Unit

OP191/OP291/OP491 SPECIFICATIONS ELECTRICAL SPECIFICATIONS Table 1 Parameter Symbol Conditions Min Typ Max Unit

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OP191/OP291/OP491 SPECIFICATIONS ELECTRICAL SPECIFICATIONS
@ VS = 3.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage OP191G VOS 80 500 μV −40°C ≤ TA ≤ +125°C 1 mV OP291G/OP491G VOS 80 700 μV −40°C ≤ TA ≤ +125°C 1.25 mV Input Bias Current IB 30 65 nA −40°C ≤ TA ≤ +125°C 95 nA Input Offset Current IOS 0.1 11 nA −40°C ≤ TA ≤ +125°C 22 nA Input Voltage Range 0 3 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 2.9 V 70 90 dB −40°C ≤ TA ≤ +125°C 65 87 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = 0.3 V to 2.7 V 25 70 V/mV −40°C ≤ TA ≤ +125°C 50 V/mV Offset Voltage Drift ∆VOS/∆T 1.1 μV/°C Bias Current Drift ∆IB/∆T 100 pA/°C Offset Current Drift ∆IOS/∆T 20 pA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 2.95 2.99 V −40°C to +125°C 2.90 2.98 V RL = 2 kΩ to GND 2.8 2.9 V −40°C to +125°C 2.70 2.80 V Output Voltage Low VOL RL = 100 kΩ to V+ 4.5 10 mV −40°C to +125°C 35 mV RL = 2 kΩ to V+ 40 75 mV −40°C to +125°C 130 mV Short-Circuit Limit ISC Sink/source ±8.75 ±13.50 mA −40°C to +125°C ±6.0 ±10.5 mA Open-Loop Impedance ZOUT f = 1 MHz, AV = 1 200 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB −40°C ≤ TA ≤ +125°C 75 110 dB Supply Current/Amplifier ISY VO = 0 V 200 350 μA −40°C ≤ TA ≤ +125°C 330 480 μA DYNAMIC PERFORMANCE Slew Rate +SR RL = 10 kΩ 0.4 V/μs Slew Rate –SR RL = 10 kΩ 0.4 V/μs Full-Power Bandwidth BWP 1% distortion 1.2 kHz Settling Time tS To 0.01% 22 μs Gain Bandwidth Product GBP 3 MHz Phase Margin θO 45 Degrees Channel Separation CS f = 1 kHz, RL = 10 kΩ 145 dB NOISE PERFORMANCE Voltage Noise en p-p 0.1 Hz to 10 Hz 2 μV p-p Voltage Noise Density en f = 1 kHz 30 nV/√Hz Current Noise Density in 0.8 pA/√Hz Rev. E | Page 3 of 24 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION INPUT OVERVOLTAGE PROTECTION OUTPUT VOLTAGE PHASE REVERSAL OVERDRIVE RECOVERY APPLICATIONS INFORMATION SINGLE 3 V SUPPLY, INSTRUMENTATION AMPLIFIER SINGLE-SUPPLY RTD AMPLIFIER A 2.5 V REFERENCE FROM A 3 V SUPPLY 5 V ONLY, 12-BIT DAC SWINGS RAIL-TO-RAIL A HIGH-SIDE CURRENT MONITOR A 3 V, COLD JUNCTION COMPENSATED THERMOCOUPLE AMPLIFIER SINGLE-SUPPLY, DIRECT ACCESS ARRANGEMENT FOR MODEMS 3 V, 50 HZ/60 HZ ACTIVE NOTCH FILTER WITH FALSE GROUND SINGLE-SUPPLY, HALF-WAVE, AND FULL-WAVE RECTIFIERS OUTLINE DIMENSIONS ORDERING GUIDE