Datasheet LTC221, LTC222 (Analog Devices) - 6

FabricanteAnalog Devices
DescripciónMicropower, Low Charge Injection, Quad CMOS Analog Switches with Data Latches
Páginas / Página12 / 6 — APPLICATIO S I FOR ATIO. In-Circuit ESD Test Circuit. WR Switching Time …
RevisiónLTC221/LTC222: Micropower, Low Charge Injection, Quad CMOS Analog Switches with Data Latches Data Sheet
Formato / tamaño de archivoPDF / 149 Kb
Idioma del documentoInglés

APPLICATIO S I FOR ATIO. In-Circuit ESD Test Circuit. WR Switching Time Test Circuit. WR Setup Conditions

APPLICATIO S I FOR ATIO In-Circuit ESD Test Circuit WR Switching Time Test Circuit WR Setup Conditions

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LTC221/LTC222
U U W U APPLICATIO S I FOR ATIO In-Circuit ESD Test Circuit
ANY SOURCE OR DRAIN PIN LTC221/ ESD TESTER LTC222 1.5k V+ S OR D 15V ±4kV POWER APPLIED 0.1µF 100pF OR OPEN CIRCUT V– –15V 0.1µF GND PER MIL-STD-883C METHOD 3015.2 LTC221/222 • TA07
WR Switching Time Test Circuit
3V LOGIC WR 50% 50% INPUT 15V 0V V+ SWITCH WR INPUT 3V SWITCH LTC221 IN S1 D1 OUTPUT V 0V S = 2V VO R C L 3V L IN1 1k 35pF LOGIC LTC222 IN INPUT 0V (REPEAT TEST FOR VS GND V– V V IN2, IN3 AND IN4) V O 0.9 0.9 O O OV –15V 0V RL t VO = VS ONWR RL+ rDS(ON) LOGIC INPUT tOFF WR LTC221/222 • AI09 tr < 20ns LTC221/222 • AI08 tr < 20ns
WR Setup Conditions WR/Input Minimum Timing Requirements
3V WR 1.5V 1.5V
PARAMETER MIN LIMIT UNITS
OV t t WW WW Write Pulse Width 230 ns t t 3V DW WD tDW Data Valid to Write 180 ns LTC221 IN 0.8V 0.8V t OV WD Data Valid After Write 30 ns 3V 2.4V 2.4V LTC222 IN OV LTC221/222 • AI10 2212fa 6