Datasheet AD8643-EP (Analog Devices) - 4
| Fabricante | Analog Devices |
| Descripción | Low Power, Rail-to-Rail, Output Precision JFET Amplifier |
| Páginas / Página | 12 / 4 — AD8643-EP. Table 2. Parameter. Symbol. Test Conditions/Comments. Min. … |
| Formato / tamaño de archivo | PDF / 255 Kb |
| Idioma del documento | Inglés |
AD8643-EP. Table 2. Parameter. Symbol. Test Conditions/Comments. Min. Typ. Max. Unit
Línea de modelo para esta hoja de datos
Versión de texto del documento
AD8643-EP
VS= ±13 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 70 1000 μV −55° < TA < +125°C 1.8 mV Input Bias Current IB 0.25 1 pA –55°C < TA < +125°C 260 pA Input Offset Current IOS 0.5 pA −55°C < TA < +125°C 65 pA Input Voltage Range −13 +10 V Common-Mode Rejection Ratio CMRR VCM = −13 V to +10 V 90 107 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = –11 V to +11 V 215 290 V/mV Offset Voltage Drift ΔVOS/ΔT −55°C < TA < +125°C 2.5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH 12.95 V IL = 1 mA, −55°C to +125°C 12.94 V Output Voltage Low VOL −12.95 V IL = 1 mA, −55°C to +125°C −12.94 V Output Current IOUT ±12 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.5 V to ±13 V 90 107 dB Supply Current/Amplifier ISY 200 290 μA −55°C < TA < +125°C 330 μA DYNAMIC PERFORMANCE Slew Rate SR 3 V/μs Gain Bandwidth Product GBP 3.5 MHz Phase Margin Ø
m
60 Degrees NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4.2 μV p-p Voltage Noise Density eN f = 1 kHz 27.5 nV/√Hz Current Noise Density iN f = 1 kHz 0.5 fA/√Hz Rev. 0 | Page 4 of 12 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE
VS= ±13 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 70 1000 μV −55° < TA < +125°C 1.8 mV Input Bias Current IB 0.25 1 pA –55°C < TA < +125°C 260 pA Input Offset Current IOS 0.5 pA −55°C < TA < +125°C 65 pA Input Voltage Range −13 +10 V Common-Mode Rejection Ratio CMRR VCM = −13 V to +10 V 90 107 dB Large Signal Voltage Gain AVO RL = 10 kΩ, VO = –11 V to +11 V 215 290 V/mV Offset Voltage Drift ΔVOS/ΔT −55°C < TA < +125°C 2.5 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH 12.95 V IL = 1 mA, −55°C to +125°C 12.94 V Output Voltage Low VOL −12.95 V IL = 1 mA, −55°C to +125°C −12.94 V Output Current IOUT ±12 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = ±2.5 V to ±13 V 90 107 dB Supply Current/Amplifier ISY 200 290 μA −55°C < TA < +125°C 330 μA DYNAMIC PERFORMANCE Slew Rate SR 3 V/μs Gain Bandwidth Product GBP 3.5 MHz Phase Margin Ø
m
60 Degrees NOISE PERFORMANCE Voltage Noise eN p-p f = 0.1 Hz to 10 Hz 4.2 μV p-p Voltage Noise Density eN f = 1 kHz 27.5 nV/√Hz Current Noise Density iN f = 1 kHz 0.5 fA/√Hz Rev. 0 | Page 4 of 12 Document Outline FEATURES ENHANCED PRODUCT FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATION TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS OUTLINE DIMENSIONS ORDERING GUIDE