Datasheet AD8065-KGD-CHIP (Analog Devices) - 3

FabricanteAnalog Devices
DescripciónHigh Performance, 145 MHzFastFET Op Amps
Páginas / Página8 / 3 — Known Good Die. AD8065-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test …
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Known Good Die. AD8065-KGD-CHIP. SPECIFICATIONS. Table 1. Parameter. Test Conditions/Comments. Min. Typ. Max. Status Unit

Known Good Die AD8065-KGD-CHIP SPECIFICATIONS Table 1 Parameter Test Conditions/Comments Min Typ Max Status Unit

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Known Good Die AD8065-KGD-CHIP SPECIFICATIONS
VS = ±5 V at TA = 30°C, RL = 1 kΩ to midsupply, G = 1, unless otherwise noted.
Table 1. Parameter Test Conditions/Comments Min Typ Max Status Unit
DYNAMIC PERFORMANCE −3 dB Bandwidth G = +1, VO = 0.2 V p-p 100 145 GBD1 MHz G = +2, VO = 0.2 V p-p 50 MHz G = +2, VO = 2 V p-p 42 MHz Bandwidth for 0.1 dB Flatness G = +2, VO = 0.2 V p-p 7 MHz Input Overdrive Recovery Time G = +1, −5.5 V to +5.5 V 175 ns Output Recovery Time G = −1, −5.5 V to +5.5 V 170 ns Slew Rate G = +2, VO = 4 V step 130 180 GBD1 V/µs Settling Time to 0.1% G = +2, VO = 2 V step 55 ns G = +2, VO = 8 V step 205 ns NOISE/HARMONIC PERFORMANCE SFDR fC = 1 MHz, G = +2, VO = 2 V p-p −88 dBc fC = 5 MHz, G = +2, VO = 2 V p-p −67 dBc fC = 1 MHz, G = +2, VO = 8 V p-p −73 dBc Third-Order Intercept fC = 10 MHz, RL = 100 Ω 24 dBm Input Voltage Noise f = 10 kHz 7 nV/√Hz Input Current Noise f = 10 kHz 0.6 fA/√Hz Differential Gain Error NTSC, G = +2, RL = 150 Ω 0.02 % Differential Phase Error NTSC, G = +2, RL = 150 Ω 0.02 Degrees DC PERFORMANCE Input Offset Voltage VCM = 0 V 0.4 1.5 Tested mV Input Offset Voltage Drift 1 17 GBD1 µV/°C Input Bias Current 2 pA TMIN to TMAX 25 pA Input Offset Current 1 pA TMIN to TMAX 1 pA Open-Loop Gain VO = ±3 V, RL = 1 kΩ 100 113 Tested dB INPUT CHARACTERISTICS Common-Mode Input Impedance 1000 || 2.1 GΩ || pF Differential Input Impedance 1000 || 4.5 GΩ || pF Input Common-Mode Voltage Range FET Input Range −5 to +1.7 −5.0 to +2.4 GBD1 V Common-Mode Rejection Ratio VCM = −1 V to +1 V −85 −100 Tested dB OUTPUT CHARACTERISTICS Output Voltage Swing RL = 1 kΩ −4.88 to −4.94 to +4.95 Tested V +4.9 RL = 150 Ω −4.8 to +4.7 V Output Current VO = 9 V p-p, SFDR ≥ −60 dBc, 35 mA f = 500 kHz Short-Circuit Current 90 mA Capacitive Load Drive 30% overshoot G = +1 20 pF POWER SUPPLY Operating Range 5 24 Tested V Quiescent Current per Amplifier 6.4 7.2 Tested mA Power Supply Rejection Ratio VS ± 2 V −85 −100 Tested dB 1 GBD = Guaranteed By Design. Rev. 0 | Page 3 of 8 Document Outline Features Applications General Description Revision History Specifications Absolute Maximum Ratings ESD Caution Pad Configuration and Function Descriptions Outline Dimensions Die Specifications and Assembly Recommendations Ordering Guide