Datasheet IRFZ44NPbF (Infineon) - 5
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Formato / tamaño de archivo | PDF / 232 Kb |
| Idioma del documento | Inglés |
Fig 10a. Fig 9. Fig 10b. Fig 11
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IRFZ44NPbF 50 R V D DS 40 VGS D.U.T. RG +-VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 I , Drain Current (A) D
Fig 10a.
Switching Time Test Circuit 10 VDS 90% 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 10%
Fig 9.
Maximum Drain Current Vs. VGS Case Temperature td(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 10 ) thJC (Z 1 D = 0.50 0.20 esponse 0.10 PDM al R 0.05 0.1 m t SINGLE PULSE 1 0.02 her 0.01 (THERMAL RESPONSE) t2 T Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ =P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 10a.
Switching Time Test Circuit 10 VDS 90% 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 10%
Fig 9.
Maximum Drain Current Vs. VGS Case Temperature td(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 10 ) thJC (Z 1 D = 0.50 0.20 esponse 0.10 PDM al R 0.05 0.1 m t SINGLE PULSE 1 0.02 her 0.01 (THERMAL RESPONSE) t2 T Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ =P DM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5