Datasheet BC560C (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | Low Noise Transistors |
| Páginas / Página | 4 / 2 — BC560C. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| Revisión | 4 |
| Formato / tamaño de archivo | PDF / 96 Kb |
| Idioma del documento | Inglés |
BC560C. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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BC560C ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −10 mAdc, IB = 0) −45 − − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = −10 mAdc, IE = 0) −50 − − Emitter−Base Breakdown Voltage V(BR)EBO −5.0 − − Vdc (IE = −10 mAdc, IC = 0) Collector Cutoff Current ICBO (VCB = −30 Vdc, IE = 0) − − −15 nAdc (VCB = −30 Vdc, IE = 0, TA = +125°C) − − −5.0 mAdc Emitter Cutoff Current IEBO nAdc (VEB = −4.0 Vdc, IC = 0) − − −15
ON CHARACTERISTICS
DC Current Gain hFE − (IC = −10 mAdc, VCE = −5.0 Vdc) 100 270 − (IC = −2.0 mAdc, VCE = −5.0 Vdc) 380 500 800 Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = −10 mAdc, IB = −0.5 mAdc) − −0.075 −0.25 (IC = −10 mAdc, IB =
(Note 1) − −0.3 −0.6 (IC = −100 mAdc, IB = −5.0 mAdc, (Note 2) − −0.25 − Base −Emitter Saturation Voltage VBE(sat) Vdc (IC = −100 mAdc, IB = −5.0 mAdc) − −1.1 − Base−Emitter On Voltage VBE(on) Vdc (IC = −10 mAdc, VCE = −5.0 Vdc) − −0.52 − (IC = −100 mAdc, VCE = −5.0 Vdc) − −0.55 − (IC = −2.0 mAdc, VCE = −5.0 Vdc) −0.55 −0.62 −0.7
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) − 250 − Collector−Base Capacitance Ccbo pF (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) − 2.5 − Small−Signal Current Gain hfe − (IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz) 450 600 900 Noise Figure dB (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) NF1 − 0.5 2.0 (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz) NF2 − − 10 1. IB is value for which IC = −11 mA at VCE = −1.0 V. 2. Pulse test = 300 ms − Duty cycle = 2%.
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BC560C ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = −10 mAdc, IB = 0) −45 − − Collector−Base Breakdown Voltage V(BR)CBO Vdc (IC = −10 mAdc, IE = 0) −50 − − Emitter−Base Breakdown Voltage V(BR)EBO −5.0 − − Vdc (IE = −10 mAdc, IC = 0) Collector Cutoff Current ICBO (VCB = −30 Vdc, IE = 0) − − −15 nAdc (VCB = −30 Vdc, IE = 0, TA = +125°C) − − −5.0 mAdc Emitter Cutoff Current IEBO nAdc (VEB = −4.0 Vdc, IC = 0) − − −15
ON CHARACTERISTICS
DC Current Gain hFE − (IC = −10 mAdc, VCE = −5.0 Vdc) 100 270 − (IC = −2.0 mAdc, VCE = −5.0 Vdc) 380 500 800 Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = −10 mAdc, IB = −0.5 mAdc) − −0.075 −0.25 (IC = −10 mAdc, IB =
(Note 1) − −0.3 −0.6 (IC = −100 mAdc, IB = −5.0 mAdc, (Note 2) − −0.25 − Base −Emitter Saturation Voltage VBE(sat) Vdc (IC = −100 mAdc, IB = −5.0 mAdc) − −1.1 − Base−Emitter On Voltage VBE(on) Vdc (IC = −10 mAdc, VCE = −5.0 Vdc) − −0.52 − (IC = −100 mAdc, VCE = −5.0 Vdc) − −0.55 − (IC = −2.0 mAdc, VCE = −5.0 Vdc) −0.55 −0.62 −0.7
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = −10 mAdc, VCE = −5.0 Vdc, f = 100 MHz) − 250 − Collector−Base Capacitance Ccbo pF (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) − 2.5 − Small−Signal Current Gain hfe − (IC = −2.0 mAdc, VCE = −5.0 V, f = 1.0 kHz) 450 600 900 Noise Figure dB (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz) NF1 − 0.5 2.0 (IC = −200 mAdc, VCE = −5.0 Vdc, RS = 100 kW, f = 1.0 kHz, Df = 200 kHz) NF2 − − 10 1. IB is value for which IC = −11 mA at VCE = −1.0 V. 2. Pulse test = 300 ms − Duty cycle = 2%.
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