Datasheet 2N5457, 2N5458 (ON Semiconductor) - 4

FabricanteON Semiconductor
DescripciónJFETs - General Purpose
Páginas / Página5 / 4 — 2N5457, 2N5458. TYPICAL CHARACTERISTICS. For 2N5457 Only. Figure 4. …
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2N5457, 2N5458. TYPICAL CHARACTERISTICS. For 2N5457 Only. Figure 4. Typical Drain Characteristics

2N5457, 2N5458 TYPICAL CHARACTERISTICS For 2N5457 Only Figure 4 Typical Drain Characteristics

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2N5457, 2N5458 TYPICAL CHARACTERISTICS For 2N5457 Only
5 5 VGS = 0 V VGS(off) ^ -3.5 V 4 4 (mA) VGS(off) ^ -3.5 V (mA) 3 3 -1 V VDS = 15 V 2 2 , DRAIN CURRENT , DRAIN CURRENT D D I -2 V I 1 1 -3 V 0 0 0 5 10 15 20 25 -5 -4 -3 -2 -1 0 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 4. Typical Drain Characteristics Figure 5. Common Source Transfer Characteristics
10 10 VGS(off) ^ -5.8 V VGS = 0 V 8 8 VGS(off) ^ -5.8 V (mA) -1 V (mA) 6 6 VDS = 15 V -2 V 4 4 , DRAIN CURRENT -3 V , DRAIN CURRENT D D I I 2 2 -4 V -5 V 0 0 0 5 10 15 20 25 -7 -6 -5 -4 -3 -2 -1 0 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) VGS, GATE  -  SOURCE VOLTAGE (VOLTS)
Figure 6. Typical Drain Characteristics Figure 7. Common Source Transfer Characteristics
NOTE: Note: Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms, Duty Cycle = 10%). Under dc conditions, self heating in higher IDSS units reduces IDSS.
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