Datasheet LT1634 (Analog Devices) - 5

FabricanteAnalog Devices
DescripciónMicropower Precision Shunt Voltage Reference
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4.096. v elecTrical characTeris. Tics. The. denotes the specifications which apply over the full

4.096 v elecTrical characTeris Tics The denotes the specifications which apply over the full

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LT1634
4.096 v elecTrical characTeris Tics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS
Temperature Coefficient (Note 8) LT1634A, IR = 20µA l 4 10 ppm/°C LT1634B/LT1634C, IR = 20µA l 10 25 ppm/°C Reverse Dynamic Impedance (Note 5) 20µA ≤ IR ≤ 2mA 0.15 0.75 Ω l 0.20 1.50 Ω Low Frequency Noise (Note 6) IR = 20µA, 0.1Hz ≤ f ≤ 10Hz 30 µVP-P Hysteresis (Note 7) ∆T = –40°C to 85°C 160 ppm ∆T = 0°C to 70°C 40 ppm
5 v elecTrical characTerisTics The
l
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. (Note 3) PARAMETER CONDITIONS MIN TYP MAX UNITS
Reverse Breakdown Voltage LT1634ACS8/LT1634BCS8/ 4.99750 5.000 5.00250 V LT1634AIS8/LT1634BIS8 (IR = 20µA) –0.05 0.05 % LT1634CCZ (IR = 20µA) 4.99000 5.000 5.01000 V –0.20 0.20 % LT1634ACS8 (IR = 20µA) l 4.99400 5.000 5.00600 V –0.12 0.12 % LT1634AIS8 (IR = 20µA) l 4.99125 5.000 5.00875 V –0.175 0.175 % LT1634BCS8 (IR = 20µA) l 4.98875 5.000 5.01125 V –0.225 0.225 % LT1634BIS8 (IR = 20µA) l 498188 5.000 5.01813 V –0.362 0.362 % LT1634CCZ (IR = 20µA) l 4.98126 5.000 5.01876 V –0.375 0.375 % Reverse Breakdown Change 20µA ≤ IR ≤ 2mA 0.30 1.5 mV with Current (Note 4) l 0.40 3.0 mV 2mA ≤ IR ≤ 20mA 6 15 mV l 6 20 mV Minimum Operating Current l 15 µA Temperature Coefficient (Note 8) LT1634A, IR = 20µA l 4 10 ppm/°C LT1634B/LT1634C, IR = 20µA l 10 25 ppm/°C Reverse Dynamic Impedance (Note 5) 20µA ≤ IR ≤ 2mA 0.15 0.75 Ω l 0.20 1.50 Ω Low Frequency Noise (Note 6) IR = 20µA, 0.1Hz ≤ f ≤ 10Hz 35 µVP-P Hysteresis (Note 7) ∆T = –40°C to 85°C 160 ppm ∆T = 0°C to 70°C 40 ppm
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
Note 7:
Hysteresis in output voltage is created by package stress that may cause permanent damage to the device. Exposure to any Absolute differs depending on whether the IC was previously at a higher or lower Maximum Rating condition for extended periods may affect device temperature. Output voltage is always measured at 25°C but the IC is reliability and lifetime. cycled to 85°C or –40°C before successive measurements. Hysteresis is
Note 2:
If the part is stored outside of the specific operating temperature roughly proportional to the square of the temperature change. Hysteresis range, the output may shift due to hysteresis. is not normally a problem for operational temperature excursions where
Note 3:
ESD (Electrostatic Discharge) sensitive device. Use proper ESD the instrument might be stored at high or low temperature. handling precautions.
Note 8:
Temperature coefficient is calculated from the minimum and
Note 4:
Output requires 0.1µF for operating current greater than 1mA. maximum output voltage measured at TMIN, Room and TMAX as follows:
Note 5:
This parameter is guaranteed by “reverse breakdown change with TC = (VOMAX – VOMIN)/(TMAX – TMIN) current” test. Incremental slope is also measured at 25°C.
Note 6:
Peak-to-peak noise is measured with a single highpass filter at 0.1Hz and 2-pole lowpass filter at 10Hz. 1634ff For more information www.linear.com/LT1634 5 Document Outline Features Description Applications Typical Application Absolute Maximum Ratings Applications Information Typical Application Related Parts