Datasheet IRL3705N (International Rectifier) - 2
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 109 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRL3705N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.010 VGS = 10V, ID = 46A RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.012 Ω VGS = 5.0V, ID = 46A ––– ––– 0.018 VGS = 4.0V, ID = 39A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 50 ––– ––– S VDS = 25V, ID = 46A ––– ––– 25 VDS = 55V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 98 ID = 46A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 49 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 140 ––– I ns D = 46A td(off) Turn-Off Delay Time ––– 37 ––– RG = 1.8Ω, VGS = 5.0V tf Fall Time ––– 78 ––– RD = 0.59Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– nH 6mm (0.25in.) from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 3600 ––– VGS = 0V Coss Output Capacitance ––– 870 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– (Body Diode) 89 showing the A I G SM Pulsed Source Current integral reverse 310 (Body Diode) ––– ––– p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 46A Qrr Reverse RecoveryCharge ––– 290 440 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD 46A, di/dt ≤ 250A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. VDD = 25V, starting TJ = 25°C, L = 320µH Calculated continuous current based on maximum allowable RG = 25Ω, IAS = 46A. (See Figure 12) junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.010 VGS = 10V, ID = 46A RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.012 Ω VGS = 5.0V, ID = 46A ––– ––– 0.018 VGS = 4.0V, ID = 39A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 50 ––– ––– S VDS = 25V, ID = 46A ––– ––– 25 VDS = 55V, VGS = 0V IDSS Drain-to-Source Leakage Current µA ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 98 ID = 46A Qgs Gate-to-Source Charge ––– ––– 19 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 49 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V tr Rise Time ––– 140 ––– I ns D = 46A td(off) Turn-Off Delay Time ––– 37 ––– RG = 1.8Ω, VGS = 5.0V tf Fall Time ––– 78 ––– RD = 0.59Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– nH 6mm (0.25in.) from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 3600 ––– VGS = 0V Coss Output Capacitance ––– 870 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 320 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
I D S Continuous Source Current MOSFET symbol ––– ––– (Body Diode) 89 showing the A I G SM Pulsed Source Current integral reverse 310 (Body Diode) ––– ––– p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 46A, VGS = 0V trr Reverse Recovery Time ––– 94 140 ns TJ = 25°C, IF = 46A Qrr Reverse RecoveryCharge ––– 290 440 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by I ≤ ≤ SD 46A, di/dt ≤ 250A/µs, VDD V(BR)DSS, max. junction temperature. ( See fig. 11 ) T ≤ J 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. VDD = 25V, starting TJ = 25°C, L = 320µH Calculated continuous current based on maximum allowable RG = 25Ω, IAS = 46A. (See Figure 12) junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4