Datasheet BC846, BC847, BC848 (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | NPN Bipolar Transistor |
| Páginas / Página | 13 / 6 — BC846, BC847, BC848. BC846B. Figure 15. Collector Saturation Region. … |
| Revisión | 12 |
| Formato / tamaño de archivo | PDF / 108 Kb |
| Idioma del documento | Inglés |
BC846, BC847, BC848. BC846B. Figure 15. Collector Saturation Region. Figure 16. Base−Emitter Temperature Coefficient
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BC846, BC847, BC848 BC846B
2.0 1.0 TS) C) ° TA = 25°C 1.6 (mV/ 1.4 TAGE (VOL 20 mA 50 mA 100 mA 200 mA 1.2 1.8 q COEFFICIENT VB for VBE I -55°C to 125°C 0.8 C = 2.2 OR-EMITTER VOL 10 mA TURE 0.4 2.6 , COLLECT , TEMPERA CE VB V θ 0 3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient
40 TA = 25°C VCE = 5 V 500 TA = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 6.0 50 C, CAP 4.0 Cob 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6
2.0 1.0 TS) C) ° TA = 25°C 1.6 (mV/ 1.4 TAGE (VOL 20 mA 50 mA 100 mA 200 mA 1.2 1.8 q COEFFICIENT VB for VBE I -55°C to 125°C 0.8 C = 2.2 OR-EMITTER VOL 10 mA TURE 0.4 2.6 , COLLECT , TEMPERA CE VB V θ 0 3.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 15. Collector Saturation Region Figure 16. Base−Emitter Temperature Coefficient
40 TA = 25°C VCE = 5 V 500 TA = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 6.0 50 C, CAP 4.0 Cob 20 f, CURRENT-GAIN - BANDWIDTH PRODUCT T 2.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 5.0 10 50 100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 17. Capacitance Figure 18. Current−Gain − Bandwidth Product www.onsemi.com 6