Datasheet BC846, BC847, BC848, BC849, BC550 (Infineon) - 5

FabricanteInfineon
DescripciónNPN Silicon AF Transistors
Páginas / Página19 / 5 — BC846...-BC850... Electrical Characteristics. Parameter. Symbol. Values. …
Formato / tamaño de archivoPDF / 187 Kb
Idioma del documentoInglés

BC846...-BC850... Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. DC Characteristics

BC846...-BC850.. Electrical Characteristics Parameter Symbol Values Unit min typ max DC Characteristics

Línea de modelo para esta hoja de datos

Versión de texto del documento

BC846...-BC850... Electrical Characteristics
at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit min. typ. max. DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO V IC = 10 mA, IB = 0 , BC846... 65 - - IC = 10 mA, IB = 0 , BC847..., BC850... 45 - - IC = 10 mA, IB = 0 , BC848..., BC849... 30 - - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 , BC846... 80 - - IC = 10 µA, IE = 0 , BC847..., BC850... 50 - - IC = 10 µA, IE = 0 , BC848..., BC849... 30 - - Emitter-base breakdown voltage V(BR)EBO - 6 - IE = 0 , IC = 10 µA Collector-base cutoff current ICBO µA VCB = 45 V, IE = 0 - 0.015 - VCB = 30 V, IE = 0 , TA = 150 °C - 5 - DC current gain1) hFE - IC = 10 µA, VCE = 5 V, hFE-grp.A - 140 - IC = 10 µA, VCE = 5 V, hFE-grp.B - 250 - IC = 10 µA, VCE = 5 V, hFE-grp.C - 480 - IC = 2 mA, VCE = 5 V, hFE-grp.A 110 180 220 IC = 2 mA, VCE = 5 V, hFE-grp.B 200 290 450 IC = 2 mA, VCE = 5 V, hFE-grp.C 420 520 800 Collector-emitter saturation voltage1) VCEsat mV IC = 10 mA, IB = 0.5 mA - 90 250 IC = 100 mA, IB = 5 mA - 200 600 Base emitter saturation voltage1) VBEsat IC = 10 mA, IB = 0.5 mA - 700 - IC = 100 mA, IB = 5 mA - 900 - Base-emitter voltage1) VBE(ON) IC = 2 mA, VCE = 5 V 580 660 700 IC = 10 mA, VCE = 5 V - - 770 1Pulse test: t < 300µs; D < 2% 5 2007-04-20