Datasheet BC856, BC857, BC858, BC859, BC860 (Infineon) - 6
| Fabricante | Infineon |
| Descripción | PNP Silicon AF Transistors |
| Páginas / Página | 10 / 6 — BC856...BC860. Collector cutoff current. Collector-emitter saturation … |
| Formato / tamaño de archivo | PDF / 168 Kb |
| Idioma del documento | Inglés |
BC856...BC860. Collector cutoff current. Collector-emitter saturation voltage. DC current gain. Base-emitter saturation voltage
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BC856...BC860 Collector cutoff current
ICBO = f (TA)
Collector-emitter saturation voltage
VCB = 30V IC = f (VCEsat), hFE = 20 EHP00381 EHP00380 10 4 10 2 nA mA Ι Ι CB0 C 10 3 100 C 5 25 C -50 C 101 max 10 2 5 5 typ 10 1 5 0 10 0 5 10 5 10 -1 10 -1 0 50 100 C 150 0 0.1 0.2 0.3 0.4 V 0.5 T V A CEsat
DC current gain
hFE = f (IC)
Base-emitter saturation voltage
VCE = 5V IC = f (VBEsat), hFE = 20 EHP00382 3 EHP00379 2 10 10 mA h 5 100 C Ι FE C 100 C 25 C 25 C -50C -50C 102 101 5 5 101 100 5 5 0 10 10-1 10-2 5 10 -1 0 5 10 5 101 mA 10 2 0 0.2 0.4 0.6 0.8 V 1.2 Ι C VBEsat 6 Jan-28-2005
ICBO = f (TA)
Collector-emitter saturation voltage
VCB = 30V IC = f (VCEsat), hFE = 20 EHP00381 EHP00380 10 4 10 2 nA mA Ι Ι CB0 C 10 3 100 C 5 25 C -50 C 101 max 10 2 5 5 typ 10 1 5 0 10 0 5 10 5 10 -1 10 -1 0 50 100 C 150 0 0.1 0.2 0.3 0.4 V 0.5 T V A CEsat
DC current gain
hFE = f (IC)
Base-emitter saturation voltage
VCE = 5V IC = f (VBEsat), hFE = 20 EHP00382 3 EHP00379 2 10 10 mA h 5 100 C Ι FE C 100 C 25 C 25 C -50C -50C 102 101 5 5 101 100 5 5 0 10 10-1 10-2 5 10 -1 0 5 10 5 101 mA 10 2 0 0.2 0.4 0.6 0.8 V 1.2 Ι C VBEsat 6 Jan-28-2005