Datasheet AP3917C (Diodes) - 4
| Fabricante | Diodes |
| Descripción | Universal AC High Voltage Step Down Power Switcher |
| Páginas / Página | 11 / 4 — AP3917C. Recommended Operating Conditions. Symbol. Parameter. Min. Max. … |
| Formato / tamaño de archivo | PDF / 603 Kb |
| Idioma del documento | Inglés |
AP3917C. Recommended Operating Conditions. Symbol. Parameter. Min. Max. Unit. T C. Electrical Characteristics. Condition. Typ
Línea de modelo para esta hoja de datos
Versión de texto del documento
AP3917C Recommended Operating Conditions Symbol Parameter Min Max Unit
VCC Supply Voltage 8.2 8.8 V VDSS Drain-Source Voltage (Note 5) — 520 V TA Ambient Temperature -40 +125 °C
T C Electrical Characteristics
(VBP = 8.2V, -40C <TA<+125C, unless otherwise specified.)
U D Symbol Parameter Condition Min Typ Max Unit O HV Startup Current Source R P
I
HV HV Supply Current VBP = 7V, VDRAIN = 100V — 3.5 — mA V
W
BP= 8.7V; —
E
ILEAK Leakage Current of Drain VDRAIN = 400V, 10 12 µA T
N
A = +25° C
VBP Voltage Management
V V BP Increasing Level at which HV Supply is — BP_HVOFF 8.1 8.5 8.8 V OFF V V BP Decreasing Level at which HV Supply is BP_HVON — 7.8 8.2 8.6 V ON VBP_HYS VBP Hysteresis (VBP_HVOFF —VBP_HVON) — — 280 — mV VBP_UVLO VBP Minimum Operating Voltage TA = +25°C — 6.5 — V VBP_RESTART VBP Restart Voltage — — 4.5 — V V VBP = 8.5V, f = 37kHz, I BP Operating Current with MOSFET — BP1 — 350 µA Switching D = 40%, TA = +25°C IBP2 VBP Quiescent Current with No Switching TA = +25°C — 110 200 µA IBP_LATCH VBP Latch Off-Current VBP = 8.8V, TA = +25°C — 26 — µA
Internal MOSFET
VDS Breakdown Voltage (Note 5) TA = +25°C 650 — — V TA = +25°C — — 16 RDS(ON) ON Resistance Ω TA = +125°C — — 30
Internal Current Sense
IPK_MAX Maximum Peak Current TA = +25°C 357 420 504 mA tLEB1 Leading-Edge Blanking TA = +25°C — 250 400 ns ISCP Current Set Point for Short Circuit Protection TA = +25°C — 600 — mA Leading-Edge Blanking for Short Circuit tLEB2 T Protection A = +25° C — 200 — ns
Feedback Input (FB Pin)
tMINOFF Minimum Off-Time TA = +25°C 12.5 17.5 22.5 µs Feedback Voltage for MOSFET Switch-On VFB — 2.4 2.5 2.6 V Threshold Feedback Voltage for Overload Protection V — FB_OLP 1.56 1.7 1.84 V Trigger Threshold tOLP Overload Protection Delay Time f = 36kHz — 170 — ms VOLD Open-Loop Detection Voltage TA = +25°C — 60 — mV tOLD Open-Loop Detection Blanking Time f = 15kHz, TA = +25°C — 4.3 — ms
Over Temperature Protection
TOTP Thermal Shutdown Threshold — +135 +150 +165 °C Note: 5. The drain-source voltage is 80% of VDS in the aging condition. AP3917C 4 of 11 May 2019 Document number: DS41542 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
VCC Supply Voltage 8.2 8.8 V VDSS Drain-Source Voltage (Note 5) — 520 V TA Ambient Temperature -40 +125 °C
T C Electrical Characteristics
(VBP = 8.2V, -40C <TA<+125C, unless otherwise specified.)
U D Symbol Parameter Condition Min Typ Max Unit O HV Startup Current Source R P
I
HV HV Supply Current VBP = 7V, VDRAIN = 100V — 3.5 — mA V
W
BP= 8.7V; —
E
ILEAK Leakage Current of Drain VDRAIN = 400V, 10 12 µA T
N
A = +25° C
VBP Voltage Management
V V BP Increasing Level at which HV Supply is — BP_HVOFF 8.1 8.5 8.8 V OFF V V BP Decreasing Level at which HV Supply is BP_HVON — 7.8 8.2 8.6 V ON VBP_HYS VBP Hysteresis (VBP_HVOFF —VBP_HVON) — — 280 — mV VBP_UVLO VBP Minimum Operating Voltage TA = +25°C — 6.5 — V VBP_RESTART VBP Restart Voltage — — 4.5 — V V VBP = 8.5V, f = 37kHz, I BP Operating Current with MOSFET — BP1 — 350 µA Switching D = 40%, TA = +25°C IBP2 VBP Quiescent Current with No Switching TA = +25°C — 110 200 µA IBP_LATCH VBP Latch Off-Current VBP = 8.8V, TA = +25°C — 26 — µA
Internal MOSFET
VDS Breakdown Voltage (Note 5) TA = +25°C 650 — — V TA = +25°C — — 16 RDS(ON) ON Resistance Ω TA = +125°C — — 30
Internal Current Sense
IPK_MAX Maximum Peak Current TA = +25°C 357 420 504 mA tLEB1 Leading-Edge Blanking TA = +25°C — 250 400 ns ISCP Current Set Point for Short Circuit Protection TA = +25°C — 600 — mA Leading-Edge Blanking for Short Circuit tLEB2 T Protection A = +25° C — 200 — ns
Feedback Input (FB Pin)
tMINOFF Minimum Off-Time TA = +25°C 12.5 17.5 22.5 µs Feedback Voltage for MOSFET Switch-On VFB — 2.4 2.5 2.6 V Threshold Feedback Voltage for Overload Protection V — FB_OLP 1.56 1.7 1.84 V Trigger Threshold tOLP Overload Protection Delay Time f = 36kHz — 170 — ms VOLD Open-Loop Detection Voltage TA = +25°C — 60 — mV tOLD Open-Loop Detection Blanking Time f = 15kHz, TA = +25°C — 4.3 — ms
Over Temperature Protection
TOTP Thermal Shutdown Threshold — +135 +150 +165 °C Note: 5. The drain-source voltage is 80% of VDS in the aging condition. AP3917C 4 of 11 May 2019 Document number: DS41542 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated