Datasheet BCV61 (Nexperia) - 5
| Fabricante | Nexperia |
| Descripción | NPN general-purpose double transistors |
| Páginas / Página | 14 / 5 — NXP Semiconductors. BCV61. NPN general-purpose double transistors. Table … |
| Revisión | 21012010 |
| Formato / tamaño de archivo | PDF / 262 Kb |
| Idioma del documento | Inglés |
NXP Semiconductors. BCV61. NPN general-purpose double transistors. Table 7. Characteristics. Symbol Parameter. Conditions. Min. Typ. Max
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NXP Semiconductors BCV61 NPN general-purpose double transistors Table 7. Characteristics
…continued Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Transistor TR2
VEBS emitter-base voltage VCB = 0 V; - - −1.8 V IE = −250 mA V − CB = 0 V; 400 - - mV IE = −10 μA hFE DC current gain VCE = 5 V; IC = 2 mA BCV61 110 - 800 BCV61A 110 - 220 BCV61B 200 - 450 BCV61C 420 - 800
Transistors TR1 and TR2
IC1/IE2 current matching IE2 = −0.5 mA; VCE1 = 5 V T ≤ amb 25 °C 0.7 - 1.3 T ≤ amb 150 °C 0.7 - 1.3 IE2 emitter current 2 VCE1 = 5 V [3] - - −5 mA [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] Device, without emitter resistors, mounted on an FR4 PCB. BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 4 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents
NXP Semiconductors BCV61 NPN general-purpose double transistors Table 7. Characteristics
…continued Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Transistor TR2
VEBS emitter-base voltage VCB = 0 V; - - −1.8 V IE = −250 mA V − CB = 0 V; 400 - - mV IE = −10 μA hFE DC current gain VCE = 5 V; IC = 2 mA BCV61 110 - 800 BCV61A 110 - 220 BCV61B 200 - 450 BCV61C 420 - 800
Transistors TR1 and TR2
IC1/IE2 current matching IE2 = −0.5 mA; VCE1 = 5 V T ≤ amb 25 °C 0.7 - 1.3 T ≤ amb 150 °C 0.7 - 1.3 IE2 emitter current 2 VCE1 = 5 V [3] - - −5 mA [1] VBEsat decreases by about 1.7 mV/K with increasing temperature. [2] VBE decreases by about 2 mV/K with increasing temperature. [3] Device, without emitter resistors, mounted on an FR4 PCB. BCV61_4 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 04 — 18 December 2009 4 of 13
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents