Datasheet MT03-041 (Marktech)
| Fabricante | Marktech |
| Descripción | Broadband Photodiode |
| Páginas / Página | 3 / 1 — MT03-041. FEATURES. APPLICATIONS. ITEMS. SYMBOL. RATINGS. UNIT. … |
| Formato / tamaño de archivo | PDF / 4.8 Mb |
| Idioma del documento | Inglés |
MT03-041. FEATURES. APPLICATIONS. ITEMS. SYMBOL. RATINGS. UNIT. CONDITIONS. MIN. TYP. MAX. www.marktechopto.com. TOLL FREE:. PHONE:. FAX:. EMAIL:
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Broadband Photodiode Product No:
MT03-041
Enhanced Sensitivity Wavelengths: 250nm-1750nm The MT03-041 is a Multi Spectral Photodiode in a hermetic TO-39 metal can package. It is specifically designed for use with wavelengths ranging from 250nm Ultraviolet (UV) to 1750nm Short Wave Infrared (SWIR).
FEATURES APPLICATIONS
> Ultra low noise > Medical > High Shunt Resistance > Industrial > Wide Dynamic Range > Communications > 365nm Enhanced Silicon/1300nm InGaAs SWIR > Security Absolute Maximum Ratings
ITEMS SYMBOL RATINGS UNIT
Reverse Voltage Vr 50 V Operating Temperature Range Topr -40 ~ +100 ºC Storage Temperature Range Tstg -55 ~ +125 ºC Lead Soldering Temperature *1 Tls 260 ºC *1: Time 5 Sec max, Position: Up to 3mm from the body. Electrical & Optical Characteristics (1.2mm Silicon-PD) Ta = 23ºC)
ITEMS SYMBOL CONDITIONS MIN TYP MAX UNIT
Dark Current Id Vr=5V -- 0.1 0.5 nA Forward Voltage Vf If=2mA -- -- 0.8 V Breakdown Voltage Vb Ir=10uA 50 150 -- V Spectral Sensitivity Range λ -- 250 -- 1100 nm Peak Sensitivity Wavelength λp -- -- 950 -- nm Responsivity Rt Vr=0V, λ=365nm 0.20 0.24 -- A/W Responsivity Rt Vr=0V, λ=633nm -- 0.40 -- A/W Rise Time @ 365nm Vf Vr=0V, Rl=1kΩ -- 100 -- ns Junction Capacitance Cj at 1MHz, Vr=0V -- 20 -- pF Junction Capacitance Cj at 1MHz,Vr=5V -- 6 8 pF Shunt Resistance Rsh Vr=10mV 1000 2000 -- mΩ 2019-05-31 Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA
www.marktechopto.com 1 TOLL FREE:
1-800-984-5337 •
PHONE:
518-956-2980 •
FAX:
518-785-4725 •
EMAIL:
info@marktechopto.com
MT03-041
Enhanced Sensitivity Wavelengths: 250nm-1750nm The MT03-041 is a Multi Spectral Photodiode in a hermetic TO-39 metal can package. It is specifically designed for use with wavelengths ranging from 250nm Ultraviolet (UV) to 1750nm Short Wave Infrared (SWIR).
FEATURES APPLICATIONS
> Ultra low noise > Medical > High Shunt Resistance > Industrial > Wide Dynamic Range > Communications > 365nm Enhanced Silicon/1300nm InGaAs SWIR > Security Absolute Maximum Ratings
ITEMS SYMBOL RATINGS UNIT
Reverse Voltage Vr 50 V Operating Temperature Range Topr -40 ~ +100 ºC Storage Temperature Range Tstg -55 ~ +125 ºC Lead Soldering Temperature *1 Tls 260 ºC *1: Time 5 Sec max, Position: Up to 3mm from the body. Electrical & Optical Characteristics (1.2mm Silicon-PD) Ta = 23ºC)
ITEMS SYMBOL CONDITIONS MIN TYP MAX UNIT
Dark Current Id Vr=5V -- 0.1 0.5 nA Forward Voltage Vf If=2mA -- -- 0.8 V Breakdown Voltage Vb Ir=10uA 50 150 -- V Spectral Sensitivity Range λ -- 250 -- 1100 nm Peak Sensitivity Wavelength λp -- -- 950 -- nm Responsivity Rt Vr=0V, λ=365nm 0.20 0.24 -- A/W Responsivity Rt Vr=0V, λ=633nm -- 0.40 -- A/W Rise Time @ 365nm Vf Vr=0V, Rl=1kΩ -- 100 -- ns Junction Capacitance Cj at 1MHz, Vr=0V -- 20 -- pF Junction Capacitance Cj at 1MHz,Vr=5V -- 6 8 pF Shunt Resistance Rsh Vr=10mV 1000 2000 -- mΩ 2019-05-31 Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA
www.marktechopto.com 1 TOLL FREE:
1-800-984-5337 •
PHONE:
518-956-2980 •
FAX:
518-785-4725 •
EMAIL:
info@marktechopto.com