Datasheet STW88N65M5-4 (STMicroelectronics) - 5

FabricanteSTMicroelectronics
DescripciónN-channel 650 V, 0.024 Ω typ., 84 A, MDmesh M5 Power MOSFET in a TO247-4 package
Páginas / Página13 / 5 — STW88N65M5-4. Electrical characteristics. Table 6. Switching times. …
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STW88N65M5-4. Electrical characteristics. Table 6. Switching times. Symbol. Parameter. Test conditions. Min. Typ. Max. Unit

STW88N65M5-4 Electrical characteristics Table 6 Switching times Symbol Parameter Test conditions Min Typ Max Unit

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STW88N65M5-4 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(V) Voltage delay time - 150 - VDD = 400 V, ID = 56 A tr(V) Voltage rise time - 19 - RG = 7.2 Ω VGS = 10 V ns tf(i) Current fall time - 24 - (see Figure 17 and 20) tc(off) Crossing time - 45 -
Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 84 A I (1) SDM Source-drain current (pulsed) - 336 A VSD (2) Forward on voltage ISD = 84 A, VGS = 0 - 1.5 V trr Reverse recovery time - 544 ns ISD = 84 A, Q di/dt = 100 A/µs rr Reverse recovery charge - 14 µC VDD = 100 V (see Figure 17) IRRM Reverse recovery current - 50 A trr Reverse recovery time ISD = 84 A, - 660 ns di/dt = 100 A/µs Qrr Reverse recovery charge - 20 µC VDD = 100 V, Tj = 150 °C IRRM Reverse recovery current (see Figure 17) - 60 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Doc ID 027754 Rev 1 5/13 13 Document Outline Figure 1. Internal schematic diagram Table 1. Device summary 1 Electrical ratings Table 2. Absolute maximum ratings Table 3. Thermal data 2 Electrical characteristics Table 4. Static Table 5. Dynamic Table 6. Switching times Table 7. Source-drain diode 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Normalized V(BR)DSS vs temperature Figure 14. Switching losses vs gate resistance 3 Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit Figure 17. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive load test circuit Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform 4 Package information 4.1 TO247-4 package information Figure 21. TO247-4 package outline Table 8. TO247-4 package mechanical data 5 Revision history Table 9. Document revision history