Datasheet SCT3160KLHR (Rohm) - 9
| Fabricante | Rohm |
| Descripción | Automotive Grade N-channel SiC power MOSFET |
| Páginas / Página | 13 / 9 — SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. … |
| Formato / tamaño de archivo | PDF / 963 Kb |
| Idioma del documento | Inglés |
SCT3160KLHR. Electrical characteristic curves. TSQ50211-SCT3160KLHR. 16.Nov.2018 - Rev.001
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SCT3160KLHR
Datasheet l
Electrical characteristic curves
Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature 0.48 0.48 T V a = 25ºC GS = 18V e 0.42 Pulsed e 0.42 Pulsed Stat 0.36 Stat [Ω] ID= 11A [Ω] 0.36 I S(on) 0.30 S(on) 0.30 D= 11A rce On- D I rce On- D I ou R D= 5A D= 5A 0.24 ou R 0.24 ce : ce : n - S n - S ai 0.18 0.18 I istan ai istan D= -5A ID= -5A ic Dr Res 0.12 ic Dr Res 0.12 Stat 0.06 Stat 0.06 0.00 0.00 8 10 12 14 16 18 20 22 -50 0 50 100 150 200 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Fig.18 Normalized Drain - Source Breakdown Resistance vs. Drain Current Voltage vs. Junction Temperature 1 1.04 V e GS = 18V 1.03 Pulsed Stat rce [Ω] ou etag 1.02 S(on) rce On- D n - S ol ou R ai 0.1 1.01 ce : T Dr wn V a = 150ºC n - S Ta = 125ºC kdo ai istan T lized a = 75ºC rea 1.00 Ta = 25ºC ma ic Dr B Res Ta = -25ºC Nor Stat V 0.99 GS = 18V Pulsed 0.01 0.98 1 10 100 -50 0 50 100 150 200 Drain Current : ID [A] Junction Temperature : Tj [ºC] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 9/12
16.Nov.2018 - Rev.001
Datasheet l
Electrical characteristic curves
Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature 0.48 0.48 T V a = 25ºC GS = 18V e 0.42 Pulsed e 0.42 Pulsed Stat 0.36 Stat [Ω] ID= 11A [Ω] 0.36 I S(on) 0.30 S(on) 0.30 D= 11A rce On- D I rce On- D I ou R D= 5A D= 5A 0.24 ou R 0.24 ce : ce : n - S n - S ai 0.18 0.18 I istan ai istan D= -5A ID= -5A ic Dr Res 0.12 ic Dr Res 0.12 Stat 0.06 Stat 0.06 0.00 0.00 8 10 12 14 16 18 20 22 -50 0 50 100 150 200 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Fig.18 Normalized Drain - Source Breakdown Resistance vs. Drain Current Voltage vs. Junction Temperature 1 1.04 V e GS = 18V 1.03 Pulsed Stat rce [Ω] ou etag 1.02 S(on) rce On- D n - S ol ou R ai 0.1 1.01 ce : T Dr wn V a = 150ºC n - S Ta = 125ºC kdo ai istan T lized a = 75ºC rea 1.00 Ta = 25ºC ma ic Dr B Res Ta = -25ºC Nor Stat V 0.99 GS = 18V Pulsed 0.01 0.98 1 10 100 -50 0 50 100 150 200 Drain Current : ID [A] Junction Temperature : Tj [ºC] www.rohm.com
TSQ50211-SCT3160KLHR
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 9/12
16.Nov.2018 - Rev.001