Datasheet BLP05H9S500P (Ampleon)

FabricanteAmpleon
DescripciónPower LDMOS transistor
Páginas / Página13 / 1 — BLP05H9S500P Power LDMOS transistor Rev. 1 — 10 September 2019. Product …
Formato / tamaño de archivoPDF / 1.6 Mb
Idioma del documentoinglés

BLP05H9S500P Power LDMOS transistor Rev. 1 — 10 September 2019. Product data sheet. 1. Product profile

Datasheet BLP05H9S500P Ampleon

Línea de modelo para esta hoja de datos

Versión de texto del documento

link to page 1
BLP05H9S500P Power LDMOS transistor Rev. 1 — 10 September 2019 Product data sheet 1. Product profile 1.1 General description
500 W LDMOS power transistor for various applications such as ISM, RF plasma lighting and defrosting at frequencies from 423 MHz to 443 MHz.
Table 1. Typical performance
RF performance at VDS = 50 V; IDq = 50 mA in a class-AB application circuit.
Test signal f VDS PL Gp

D (MHz) (V) (W) (dB) (%)
CW 433 50 500 25.3 75 CW pulsed [1] 433 50 500 25.6 75.8 [1] tp = 100 s;  = 10 %.
1.2 Features and benefits
High efficiency Easy power control Excellent ruggedness Integrated ESD protection Designed for ISM operation (423 MHz to 443 MHz) Excellent thermal stability For RoHS compliance see the product details on the Ampleon website
1.3 Applications
RF power amplifiers for CW and pulsed CW applications in the 423 MHz to 443 MHz frequency range such as ISM, RF plasma lighting and defrosting Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Test information 7.1 Ruggedness in class-AB operation 7.2 Impedance information 7.3 Application circuit 7.4 Graphical data 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents