Datasheet Si2399DS (Vishay) - 5
| Fabricante | Vishay |
| Descripción | P-Channel 20-V (D-S) MOSFET |
| Páginas / Página | 10 / 5 — Si2399DS. TYPICAL CHARACTERISTICS. Current Derating*. Power, … |
| Formato / tamaño de archivo | PDF / 214 Kb |
| Idioma del documento | Inglés |
Si2399DS. TYPICAL CHARACTERISTICS. Current Derating*. Power, Junction-to-Foot. Power, Junction-to-Ambient
Línea de modelo para esta hoja de datos
Versión de texto del documento
Si2399DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 8 6 (A) Package Limited rent 4 in Cur ra D - I D 2 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating*
3 1 2.5 0.8 2 0.6 (W) (W) 1.5 wer wer o o P P 0.4 1 0.2 0.5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A
Power, Junction-to-Foot Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67343 www.vishay.com S11-0239-Rev. A, 14-Feb-11 5
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 8 6 (A) Package Limited rent 4 in Cur ra D - I D 2 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating*
3 1 2.5 0.8 2 0.6 (W) (W) 1.5 wer wer o o P P 0.4 1 0.2 0.5 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A
Power, Junction-to-Foot Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67343 www.vishay.com S11-0239-Rev. A, 14-Feb-11 5