Datasheet DN3525 (Microchip) - 3

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DN3525 AC ELECTRICAL CHARACTERISTICS Electrical Specifications:
TA = 25°C unless otherwise specified.

Specification is obtained by characterization and is not 100% tested.
Parameter Sym. Min. Typ. Max. Unit Conditions
Forward Transconductance GFS 225 — — mmho VDS = 10V, ID = 150 mA Input Capacitance CISS — 270 350 pF VGS = –5V, Common Source Output C V OSS — 20 60 pF DS = 25V, Capacitance f = 1 MHz Reverse Transfer Capacitance CRSS — 5 20 pF Turn-On Delay Time td(ON) — — 20 ns VDD = 25V, Rise Time tr — — 25 ns ID = 150 mA, Turn-Off Delay Time t R d(OFF) — — 25 ns GEN = 25Ω, VGS = 0V to –10V Fall Time tf — — 40 ns
DIODE PARAMETER
V Diode Forward Voltage Drop V GS = –5V, ISD = 150 mA SD — — 1.8 V (
Note 1
) Reverse Recovery Time trr — 800 — ns VGS = –5V, ISD = 150 mA
Note 1:
Unless otherwise stated, all DC parameters are 100% tested at 25°C. Pulse test: 300 µs pulse, 2% duty cycle
TEMPERATURE SPECIFICATIONS Parameter Sym. Min. Typ. Max. Unit Conditions TEMPERATURE RANGE
Operating Ambient Temperature TA –55 — +150 °C Storage Temperature TS –55 — +150 °C
PACKAGE THERMAL RESISTANCE
3-lead SOT-89 JA — 133 — °C/W
THERMAL CHARACTERISTICS Power Dissipation at ID (Note 1 ) ID T I I Package (Continuous) (Pulsed) A = 25°C DR (Note 1 ) DRM (Note 2) (mA) (A) (mA) (A) (W)
3-lead SOT-89 360 1 1.6 360 1
Note 1:
ID (continuous) is limited by maximum TJ.
2:
Mounted on an FR4 board, 25 mm x 25 mm x 1.57 mm  2018 Microchip Technology Inc. DS20005705A-page 3 Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSV Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(OFF) and RDS(ON) with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MIC... Trademarks The Microchip name and logo, the Microchip logo, AnyRate, AVR, AVR logo, AVR Freaks, BeaconThings, BitCloud, CryptoMemory, CryptoRF, dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KeeLoq, KeeLoq logo, Kleer, LANCheck, LINK MD, maXStylus, maXTouch, Media... ClockWorks, The Embedded Control Solutions Company, EtherSynch, Hyper Speed Control, HyperLight Load, IntelliMOS, mTouch, Precision Edge, and Quiet-Wire are registered trademarks of Microchip Technology Incorporated in the U.S.A. Adjacent Key Suppression, AKS, Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut, BodyCom, chipKIT, chipKIT logo, CodeGuard, CryptoAuthentication, CryptoCompanion, CryptoController, dsPICDEM, dsPICDEM.net, Dynamic Average Matching, DAM, ECAN, ... SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademark of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. © 2018, Microchip Technology Incorporated, All Rights Reserved. ISBN: 978-1-5224-3117-6 AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham