Datasheet LND150, LND250 (Microchip) - 5

FabricanteMicrochip
DescripciónN-Channel Depletion-Mode DMOS FETs
Páginas / Página16 / 5 — LND150/LND250. (normalized). DSS. (milliamps). I D. T (OC). (Ω). SOURCE. …
Formato / tamaño de archivoPDF / 1.3 Mb
Idioma del documentoInglés

LND150/LND250. (normalized). DSS. (milliamps). I D. T (OC). (Ω). SOURCE. FIGURE 2-7:. FIGURE 2-10:. DS(ON). GS(OFF). (V). FIGURE 2-8:. FIGURE 2-11:

LND150/LND250 (normalized) DSS (milliamps) I D T (OC) (Ω) SOURCE FIGURE 2-7: FIGURE 2-10: DS(ON) GS(OFF) (V) FIGURE 2-8: FIGURE 2-11:

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LND150/LND250
1.4 V = -5.0V GS 1.1 I 1.2 D ↓ 25°C LND1 125°C 1.0 R 0.8 SOURCE 1.0
(normalized)
0.6
DSS (milliamps) BV I D
0.4 0.2 0.9 0.0 -50 0 50 100 150 10 100 1K 10K 100K
T (OC) R (Ω) j SOURCE FIGURE 2-7:
BVDSS Variation with
FIGURE 2-10:
Drain Current vs. RSOURCE. Temperature. 10 1.8 V = 400V DS 2.0 1.6 T = -55°C R @ I = 1.0mA A DS(ON) D 1.6 25°C 1.4 125°C 5 1.2
(normalized) (normalized) (milliamps)
1.2
I D DS(ON) GS(OFF)
0.8
R V
V @ 100nA GS(OFF) 1.0 0.4 0 0.8-50 0 50 100 150 -1 0 1 2 3
V (V) T (OC) GS j FIGURE 2-8:
Transfer Characteristics.
FIGURE 2-11:
VGS(OFF) and RDS Variation with Temperature. 10 10 V = -10V GS 8.7pF CISS V = 20V DS 40V 60V 5
(V)
5
GS V C (picofarads)
0 COSS CRSS 0 0 10 20 30 40 -50 0.1 0.2 0.3
V (V) DS Q (nanocoulombs) C FIGURE 2-9:
Capacitance vs. Drain-to-
FIGURE 2-12:
Gate Drive Dynamic Source Voltage. Characteristics.  2018 Microchip Technology Inc. DS20005454A-page 5 Document Outline N-Channel Depletion-Mode DMOS FETs Features Applications General Description Package Types 1.0 Electrical Characteristics Absolute Maximum Ratings† DC Electrical Characteristics AC Electrical Characteristics Temperature Specifications Thermal Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: Drain Current vs. RSOURCE. FIGURE 2-11: VGS(OFF) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: TO-92 Pin Function Table TABLE 3-2: SOT-23 Pin Function Table TABLE 3-3: SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information Appendix A: Revision History Revision A (August 2018) Product Identification System Worldwide Sales and Service