Datasheet TPD7106F (Toshiba) - 10
| Fabricante | Toshiba |
| Descripción | Intelligent Power Device Silicon Power MOS Integrated Circuit |
| Páginas / Página | 22 / 10 — TPD7106F. Characteristics. Symbol. Pin. Test Condition. Min. Typ. Max. … |
| Formato / tamaño de archivo | PDF / 637 Kb |
| Idioma del documento | Inglés |
TPD7106F. Characteristics. Symbol. Pin. Test Condition. Min. Typ. Max. Unit. 11. Test Circuit. 11.1. Test circuit 1
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TPD7106F
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Characteristics Symbol Pin Test Condition Min Typ. Max Unit
tON IN1, - 0.1 0.5 Refer to test circuit 1, T ms OUT1 j=25°C t Switching time OFF1 - 0.4 0.5 IN2, tOFF2 Refer to test circuit 2, T OUT2 j=25°C - 10 15 μs IN2, Rapid off drive operation time tO2ON T OUT2 j=25°C 50 100 200 μs Output current in reverse IREV1 OUT1 Refer to test circuit 3 -10 - - μA connection VDD=-4.5 to -18V IREV2 OUT2 -10 - - μA Note1: Built in pull down resistance 100kΩ(typ.). Note2: Typical value is VDD=12V and Tj=25°C condition.
11. Test Circuit 11.1. Test circuit 1
12V 24V VIN1 1 CP1- CP2- 16 2 TEST N.C. 15 VDD+4V 1.4V VOUT1 3 CP1 CP2 14 4 VDD CPV 13 tON tOFF1 5 STBY OUT1 12 VIN1 1kΩ 6 IN1 OUT2 11 68000 VOUT1 VM 7 IN2 DIAG 10 pF 8 GND1 GND2 9
Figure 11.1 Switching time measurement circuit (1) 11.2. Test circuit 2
12V 24V VIN2 1 CP1- CP2- 16 ≒VCPV 2 TEST N.C. 15 3 CP1 CP2 14 VOUT2 1.4V 4 VDD CPV 13 1kΩ 5 STBY OUT1 12 tOFF2 6 IN1 OUT2 11 VOUT2 68000 VIN2 10Ω 7 IN2 DIAG 10 VM 8 GND1 GND2 9 pF
Figure 11.2 Switching time measurement circuit (2)
© 2019 10 2020-01-16 Toshiba Electronic Devices & Storage Corporation
（Continued from previous page）
Characteristics Symbol Pin Test Condition Min Typ. Max Unit
tON IN1, - 0.1 0.5 Refer to test circuit 1, T ms OUT1 j=25°C t Switching time OFF1 - 0.4 0.5 IN2, tOFF2 Refer to test circuit 2, T OUT2 j=25°C - 10 15 μs IN2, Rapid off drive operation time tO2ON T OUT2 j=25°C 50 100 200 μs Output current in reverse IREV1 OUT1 Refer to test circuit 3 -10 - - μA connection VDD=-4.5 to -18V IREV2 OUT2 -10 - - μA Note1: Built in pull down resistance 100kΩ(typ.). Note2: Typical value is VDD=12V and Tj=25°C condition.
11. Test Circuit 11.1. Test circuit 1
12V 24V VIN1 1 CP1- CP2- 16 2 TEST N.C. 15 VDD+4V 1.4V VOUT1 3 CP1 CP2 14 4 VDD CPV 13 tON tOFF1 5 STBY OUT1 12 VIN1 1kΩ 6 IN1 OUT2 11 68000 VOUT1 VM 7 IN2 DIAG 10 pF 8 GND1 GND2 9
Figure 11.1 Switching time measurement circuit (1) 11.2. Test circuit 2
12V 24V VIN2 1 CP1- CP2- 16 ≒VCPV 2 TEST N.C. 15 3 CP1 CP2 14 VOUT2 1.4V 4 VDD CPV 13 1kΩ 5 STBY OUT1 12 tOFF2 6 IN1 OUT2 11 VOUT2 68000 VIN2 10Ω 7 IN2 DIAG 10 VM 8 GND1 GND2 9 pF
Figure 11.2 Switching time measurement circuit (2)
© 2019 10 2020-01-16 Toshiba Electronic Devices & Storage Corporation